Datasheet > NTK3043N

NTK3043N

更新时间： 2024-09-16 06:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	56K
描述
Power MOSFET 20 V, 285 mA, N−Channel with ESD Protection, SOT−723

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NTK3043N 数据手册

NTK3043N

Power MOSFET

20 V, 285 mA, N−Channel with ESD

Protection, SOT−723

Features

http://onsemi.com

• Enables High Density PCB Manufacturing

• 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89

• Low Voltage Drive Makes this Device Ideal for Portable Equipment

DS(on)

TYP

I Max

(BR)DSS

1.5 W @ 4.5 V

• Low Threshold Levels, V

< 1.3 V

GS(TH)

2.4 W @ 2.5 V

5.1 W @ 1.8 V

6.8 W @ 1.65 V

• Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin

Environments such as Portable Electronics

285 mA

20 V

• Operated at Standard Logic Level Gate Drive, Facilitating Future

Migration to Lower Levels Using the Same Basic Topology

• These are Pb−Free Devices

Top View

Applications

• Interfacing, Switching

• High Speed Switching

• Cellular Phones, PDAs

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

1 − Gate

2 − Source

3 − Drain

Continuous Drain

Current (Note 1)

Steady T = 25°C

255

185

285

440

State

T = 85°C

t v 5 s T = 25°C

MARKING

DIAGRAM

Power Dissipation

(Note 1)

Steady

State

T = 25°C

t v 5 s

545

210

155

310

Continuous Drain

Current (Note 2)

T = 25°C

T = 85°C

SOT−723

CASE 631AA

Steady

State

Power Dissipation

(Note 2)

T = 25°C

KA = Device Code

= Date Code

Pulsed Drain Current

t = 10 ms

400

Operating Junction and Storage Temperature T , T

−55 to

150

°C

STG

ORDERING INFORMATION

Source Current (Body Diode) (Note 2)

286

260

†

Device

Package

Shipping

Lead Temperature for Soldering Purposes

(1/8” from case for 10 seconds)

°C

NTK3043NT1G

NTK3043NT5G

SOT−723* 4000 / Tape & Reel

SOT−723* 8000 / Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(Cu area = 1.127 in sq [1 oz] including traces)

2. Surface−mounted on FR4 board using the minimum recommended pad size.

*These packages are inherently Pb−Free.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

April, 2006 − Rev. 3

NTK3043N/D

12 3 4 5

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与NTK3043N相关器件

型号	品牌	获取价格	描述	数据表
NTK3043NT1G	ONSEMI	获取价格	Power MOSFET 20 V, 285 mA, N−Channel with ESD Protection, SOT−723
NTK3043NT5G	ONSEMI	获取价格	Power MOSFET 20 V, 285 mA, N−Channel with ESD Protection, SOT−723
NTK3134N	ONSEMI	获取价格	Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723
NTK3134NT1G	ONSEMI	获取价格	Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723
NTK3134NT5G	ONSEMI	获取价格	Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723
NTK3134NT5H	ONSEMI	获取价格	750mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 631AA, 3
NTK3139P	ONSEMI	获取价格	Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT&#
NTK3139PT1G	ONSEMI	获取价格	Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT&#
NTK3139PT1H	ONSEMI	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
NTK3139PT5G	ONSEMI	获取价格	Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT&#

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