Datasheet > NTK3139PT1H

NTK3139PT1H

更新时间： 2024-11-06 20:10:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	102K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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中文翻译

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技术参数
数据手册

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NTK3139PT1H 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.65
JESD-609代码：	e3	湿度敏感等级：	1
端子面层：	Tin (Sn)	Base Number Matches：	1

NTK3139PT1H 数据手册

NTK3139P

Power MOSFET

−20 V, −780 mA, Single P−Channel with

ESD Protection, SOT−723

Features

http://onsemi.com

• P−channel Switch with Low R

DS(on)

• 44% Smaller Footprint and 38% Thinner than SC−89

TYP

I Max

(BR)DSS

DS(on)

• Low Threshold Levels Allowing 1.5 V R

• Operated at Low Logic Level Gate Drive

Rating

0.38 W @ −4.5 V

0.52 W @ −2.5 V

0.70 W @ −1.8 V

0.95 W @ −1.5 V

−780 mA

−660 mA

−100 mA

DS(on)

−20 V

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Load/Power Switching

• Interfacing, Logic Switching

• Battery Management for Ultra Small Portable Electronics

SOT−723 (3−LEAD)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

−20

Unit

DSS

Continuous Drain

Current (Note 1)

Steady

T = 25°C

−780

−570

−870

450

State

T = 85°C

Top View

1 − Gate

2 − Source

3 − Drain

t v 5 s

Steady

State

T = 25°C

Power Dissipation

(Note 1)

T = 25°C

t v 5 s

Steady

State

550

−660

−480

310

MARKING DIAGRAM

Continuous Drain

Current (Note 2)

T = 25°C

T = 85°C

KD M

Power Dissipation

(Note 2)

T = 25°C

SOT−723

CASE 631AA

STYLE 5

KD = Specific Device Code

Pulsed Drain Cur-

rent

t = 10 ms

−1.2

= Date Code

Operating Junction and Storage Tempera-

ture

T , T

−55 to

°C

STG

150

ORDERING INFORMATION

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

†

Device

Package

Shipping

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces)

NTK3139PT1G

NTK3139PT1H

NTK3139PT5G

NTK3139PT5H

4000 / Tape & Reel

SOT−723

Pb−Free

8000 / Tape & Reel

2. Surface mounted on FR4 board using the minimum recommended pad size

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

September, 2013 − Rev. 1

NTK3139P/D

12 3 4 5

中文翻译

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与NTK3139PT1H相关器件

型号	品牌	获取价格	描述	数据表
NTK3139PT5G	ONSEMI	获取价格	Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT&#
NTK3139PT5H	ONSEMI	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
NTK3142P	ONSEMI	获取价格	High Efficiency DC-DC Converters
NTK3142PT1G	ONSEMI	获取价格	Small Signal MOSFET â20 V, â280 mA, PâC
NTK3142PT1G	ROCHESTER	获取价格	215mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 631AA-01, 3 PIN
NTK3142PT5G	ROCHESTER	获取价格	215mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 631AA-01, 3 PIN
NTK3142PT5G	ONSEMI	获取价格	小信号 MOSFET，20V，280mA，3.4Ω，单 P 沟道，SOT-723，带 ES
NTK4401NT1G	ONSEMI	获取价格	20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 631AA-01, 3 PIN
NTK-A	TOKEN	获取价格	德键电子(NTK)网络高压分流电阻器可接受客户定制。
NTK-B	TOKEN	获取价格	High Voltage Network Dividers

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