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NTK3134NT1G

更新时间： 2024-11-23 03:02:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 59K
描述
Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723

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NTK3134NT1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：0.56
配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：0.89 A最大漏极电流 (ID)：0.89 A
最大漏源导通电阻：0.35 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：15 pFJESD-30 代码：R-PDSO-F3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.55 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTK3134NT1G 数据手册

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NTK3134N  
Power MOSFET  
20 V, 890 mA, Single N−Channel with  
ESD Protection, SOT−723  
Features  
http://onsemi.com  
• N channel Switch with Low R  
DS(on)  
V
R
TYP  
I Max  
D
• 44% Smaller Footprint and 38% Thinner than SC89  
(BR)DSS  
DS(on)  
0.20 W @ 4.5 V  
0.26 W @ 2.5 V  
0.42 W @ 1.8 V  
0.62 W @ 1.5 V  
890 mA  
790 mA  
700 mA  
200 mA  
• Low Threshold Levels Allowing 1.5 V R  
• Operated at Low Logic Level Gate Drive  
• These are Pb−Free Devices  
Rating  
DS(on)  
20 V  
Applications  
• Load/Power Switching  
• Interface Switching  
• Logic Level Shift  
SOT−723 (3−LEAD)  
3
• Battery Management for Ultra Small Portable Electronics  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
20  
Unit  
V
V
DSS  
V
6
V
GS  
1
2
Continuous Drain  
Current (Note 1)  
Steady  
State  
T = 25°C  
I
890  
640  
990  
450  
mA  
A
D
Top View  
T = 85°C  
A
1 − Gate  
2 − Source  
3 − Drain  
t ≤ 5 s  
T = 25°C  
A
Power Dissipation  
(Note 1)  
Steady  
State  
T = 25°C  
A
P
mW  
mA  
D
t ≤ 5 s  
550  
750  
540  
310  
MARKING DIAGRAM  
Continuous Drain  
Current (Note 2)  
Steady  
State  
T = 25°C  
A
I
D
T = 85°C  
A
KF M  
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
mW  
A
SOT−723  
D
1
CASE 631AA  
STYLE 5  
Pulsed Drain  
Current  
t = 10 ms  
p
I
1.8  
DM  
KF = Specific Device Code  
M
= Date Code  
Operating Junction and Storage  
Temperature  
T , T  
−55 to  
150  
°C  
°C  
J
STG  
ORDERING INFORMATION  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
L
†
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq  
[1 oz] including traces)  
NTK3134NT1G  
NTK3134NT5G  
SOT−723* 4000 / Tape & Reel  
SOT−723* 8000 / Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. Surface mounted on FR4 board using the minimum recommended pad size  
*These packages are inherently Pb−Free.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2006 − Rev. 0  
NTK3134N/D  
 
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NTK3134NT1G 替代型号

型号 品牌 替代类型 描述 数据表
NTK3134NT5G ONSEMI

完全替代

 Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723
NTK3134NT5H ONSEMI

类似代替

 750mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 631AA, 3

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