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NTK3043NT5G

更新时间： 2024-11-06 06:00:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 56K
描述
Power MOSFET 20 V, 285 mA, N−Channel with ESD Protection, SOT−723

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NTK3043NT5G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.18
其他特性：LOGIC LEVEL COMPATIBLE配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：0.255 A
最大漏极电流 (ID)：0.21 A最大漏源导通电阻：3.8 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.545 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTK3043NT5G 数据手册

 浏览型号NTK3043NT5G的Datasheet PDF文件第2页浏览型号NTK3043NT5G的Datasheet PDF文件第3页浏览型号NTK3043NT5G的Datasheet PDF文件第4页浏览型号NTK3043NT5G的Datasheet PDF文件第5页 
NTK3043N  
Power MOSFET  
20 V, 285 mA, N−Channel with ESD  
Protection, SOT−723  
Features  
http://onsemi.com  
• Enables High Density PCB Manufacturing  
• 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89  
• Low Voltage Drive Makes this Device Ideal for Portable Equipment  
V
R
DS(on)  
TYP  
I Max  
D
(BR)DSS  
1.5 W @ 4.5 V  
• Low Threshold Levels, V  
< 1.3 V  
GS(TH)  
2.4 W @ 2.5 V  
5.1 W @ 1.8 V  
6.8 W @ 1.65 V  
• Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin  
Environments such as Portable Electronics  
285 mA  
20 V  
• Operated at Standard Logic Level Gate Drive, Facilitating Future  
Migration to Lower Levels Using the Same Basic Topology  
• These are Pb−Free Devices  
Top View  
3
Applications  
• Interfacing, Switching  
• High Speed Switching  
• Cellular Phones, PDAs  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
20  
Unit  
V
1
2
V
DSS  
Gate−to−Source Voltage  
V
10  
V
GS  
1 − Gate  
2 − Source  
3 − Drain  
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
255  
185  
285  
440  
A
State  
T = 85°C  
A
I
mA  
D
t v 5 s T = 25°C  
A
MARKING  
DIAGRAM  
Power Dissipation  
(Note 1)  
Steady  
State  
T = 25°C  
A
P
mW  
D
D
t v 5 s  
545  
210  
155  
310  
Continuous Drain  
Current (Note 2)  
T = 25°C  
A
I
D
KA  
1
mA  
T = 85°C  
SOT−723  
CASE 631AA  
Steady  
State  
A
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
mW  
KA = Device Code  
= Date Code  
Pulsed Drain Current  
t = 10 ms  
p
I
400  
mA  
DM  
M
Operating Junction and Storage Temperature T , T  
−55 to  
150  
°C  
J
STG  
ORDERING INFORMATION  
Source Current (Body Diode) (Note 2)  
I
286  
260  
mA  
S
†
Device  
Package  
Shipping  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 seconds)  
°C  
T
L
NTK3043NT1G  
NTK3043NT5G  
SOT−723* 4000 / Tape & Reel  
SOT−723* 8000 / Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 in sq pad size  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
(Cu area = 1.127 in sq [1 oz] including traces)  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
*These packages are inherently Pb−Free.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 3  
NTK3043N/D  
 
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NTK3043NT5G 替代型号

型号 品牌 替代类型 描述 数据表
NTK3043NT1G ONSEMI

类似代替

 Power MOSFET 20 V, 285 mA, N−Channel with ESD Protection, SOT−723
SSM3K35MFV TOSHIBA

功能相似

 High-Speed Switching Applications Analog Switch Applications

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