Datasheet > NTK3134N

NTK3134N

更新时间： 2024-09-16 03:45:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	59K
描述
Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723

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NTK3134N 数据手册

NTK3134N

Power MOSFET

20 V, 890 mA, Single N−Channel with

ESD Protection, SOT−723

Features

http://onsemi.com

• N channel Switch with Low R

DS(on)

TYP

I Max

• 44% Smaller Footprint and 38% Thinner than SC89

(BR)DSS

DS(on)

0.20 W @ 4.5 V

0.26 W @ 2.5 V

0.42 W @ 1.8 V

0.62 W @ 1.5 V

890 mA

790 mA

700 mA

200 mA

• Low Threshold Levels Allowing 1.5 V R

• Operated at Low Logic Level Gate Drive

• These are Pb−Free Devices

Rating

DS(on)

20 V

Applications

• Load/Power Switching

• Interface Switching

• Logic Level Shift

SOT−723 (3−LEAD)

• Battery Management for Ultra Small Portable Electronics

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

DSS

Continuous Drain

Current (Note 1)

Steady

State

T = 25°C

890

640

990

450

Top View

T = 85°C

1 − Gate

2 − Source

3 − Drain

t ≤ 5 s

T = 25°C

Power Dissipation

(Note 1)

Steady

State

T = 25°C

t ≤ 5 s

550

750

540

310

MARKING DIAGRAM

Continuous Drain

Current (Note 2)

Steady

State

T = 25°C

T = 85°C

KF M

Power Dissipation

(Note 2)

T = 25°C

SOT−723

CASE 631AA

STYLE 5

Pulsed Drain

Current

t = 10 ms

1.8

KF = Specific Device Code

= Date Code

Operating Junction and Storage

Temperature

T , T

−55 to

150

°C

STG

ORDERING INFORMATION

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

†

Device

Package

Shipping

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces)

NTK3134NT1G

NTK3134NT5G

SOT−723* 4000 / Tape & Reel

SOT−723* 8000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

2. Surface mounted on FR4 board using the minimum recommended pad size

*These packages are inherently Pb−Free.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

December, 2006 − Rev. 0

NTK3134N/D

12 3 4 5

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与NTK3134N相关器件

型号	品牌	获取价格	描述	数据表
NTK3134NT1G	ONSEMI	获取价格	Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723
NTK3134NT5G	ONSEMI	获取价格	Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723
NTK3134NT5H	ONSEMI	获取价格	750mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 631AA, 3
NTK3139P	ONSEMI	获取价格	Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT&#
NTK3139PT1G	ONSEMI	获取价格	Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT&#
NTK3139PT1H	ONSEMI	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
NTK3139PT5G	ONSEMI	获取价格	Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT&#
NTK3139PT5H	ONSEMI	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
NTK3142P	ONSEMI	获取价格	High Efficiency DC-DC Converters
NTK3142PT1G	ONSEMI	获取价格	Small Signal MOSFET â20 V, â280 mA, PâC

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