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NTJS3151PT2G PDF预览

NTJS3151PT2G

更新时间: 2024-11-01 03:45:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 134K
描述
Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88

NTJS3151PT2G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.17
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压:12 V
最大漏极电流 (Abs) (ID):2.7 A最大漏极电流 (ID):2.7 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NTJS3151PT2G 数据手册

 浏览型号NTJS3151PT2G的Datasheet PDF文件第2页浏览型号NTJS3151PT2G的Datasheet PDF文件第3页浏览型号NTJS3151PT2G的Datasheet PDF文件第4页浏览型号NTJS3151PT2G的Datasheet PDF文件第5页浏览型号NTJS3151PT2G的Datasheet PDF文件第6页 
NTJS3151P  
Trench Power MOSFET  
12 V, 3.3 A, Single PChannel,  
ESD Protected SC88  
Features  
http://onsemi.com  
Leading Trench Technology for Low R  
Extending Battery Life  
DS(ON)  
SC88 Small Outline (2x2 mm, SC706 Equivalent)  
Gate Diodes for ESD Protection  
V
R
Typ  
I Max  
D
(BR)DSS  
DS(on)  
45 mW @ 4.5 V  
67 mW @ 2.5 V  
PbFree Packages are Available  
12 V  
3.3 A  
Applications  
133 mW @ 1.8 V  
High Side Load Switch  
Cell Phones, Computing, Digital Cameras, MP3s and PDAs  
SC88 (SOT363)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
D
D
1
2
3
6
D
D
S
J
Parameter  
DraintoSource Voltage  
Symbol  
Value Units  
V
DSS  
12  
12  
V
V
A
5
4
GatetoSource Voltage  
V
GS  
Continuous Drain  
Current (Note 1)  
Steady T = 25 °C  
I
D
2.7  
2.0  
3.3  
0.625  
A
State  
G
T = 85 °C  
A
t 5 s  
T = 25 °C  
A
Top View  
D
Power Dissipation  
(Note 1)  
Steady T = 25 °C  
P
D
W
A
State  
Pulsed Drain Current  
t = 10 ms  
p
I
8.0  
A
3 kW  
DM  
G
Operating Junction and Storage Temperature  
T ,  
STG  
55 to  
150  
°C  
J
T
Source Current (Body Diode)  
I
S
0.8  
A
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
260  
°C  
T
L
S
THERMAL RESISTANCE RATINGS (Note 1)  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Parameter  
Symbol  
Max  
200  
141  
102  
Units  
D
D
S
JunctiontoAmbient – Steady State  
JunctiontoAmbient t 5 s  
JunctiontoLead – Steady State  
R
°C/W  
q
JA  
6
1
R
q
JA  
TJ M G  
SC88/SOT363  
CASE 419B  
R
q
JL  
G
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 in sq pad size  
STYLE 28  
1
D
D
G
TJ  
M
G
= Device Code  
= Date Code  
= PbFree Package  
(Cu area = 1.127 in sq [1 oz] including traces).  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 Rev. 2  
NTJS3151/D  

NTJS3151PT2G 替代型号

型号 品牌 替代类型 描述 数据表
NTJS3151PT1G ONSEMI

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