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NTJS4405NT1G

更新时间： 2024-11-06 03:04:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 131K
描述
Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88

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中文翻译

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NTJS4405NT1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-70包装说明：SC-88, SC-70, 6 PIN
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.75配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：25 V最大漏极电流 (Abs) (ID)：1 A
最大漏极电流 (ID)：1 A最大漏源导通电阻：0.35 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：12 pF
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.89 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON

NTJS4405NT1G 数据手册

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NTJS4405N  
Small Signal MOSFET  
25 V, 1.2 A, Single, N−Channel, SC−88  
Features  
• Advance Planar Technology for Fast Switching, Low R  
http://onsemi.com  
DS(on)  
• Higher Efficiency Extending Battery Life  
• Pb−Free Packages are Available  
V
R
Typ  
I Max  
D
(BR)DSS  
DS(on)  
249 mW @ 4.5 V  
299 mW @ 2.7 V  
25 V  
1.2 A  
Applications  
• Boost and Buck Converter  
• Load Switch  
• Battery Protection  
N−Channel  
Drain  
1 2 5 6  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain−to−Source Voltage  
Symbol Value Unit  
Gate  
3
V
25  
"8.0  
1.2  
V
V
A
A
DSS  
Gate−to−Source Voltage  
V
GS  
Source 4  
Drain Current  
t < 5 s T = 25°C  
I
D
D
A
Continuous Drain Current  
(Note 1)  
T = 25°C  
I
1.0  
A
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Steady  
State  
T = 75°C  
A
0.80  
0.63  
0.89  
3.7  
D
D
S
Power Dissipation (Note 1)  
Power Dissipation (Note 1)  
Pulsed Drain Current  
Steady State  
t v 5 s  
t = 10 ms  
P
P
W
W
A
D
6
1
D
SC−88/SOT−363  
CASE 419B  
TS M G  
I
p
DM  
G
Operating Junction and Storage Temperature  
T ,  
STG  
−55 to  
+150  
°C  
J
T
1
D
D
G
Source Current (Body Diode) (Note 1)  
I
S
0.8  
A
TS  
M
G
= Device Code  
= Date Code  
= Pb−Free Package  
Lead Temperature for Soldering Purposes  
260  
°C  
T
L
(1/8″ from case for 10 s)  
ESD Rating − Machine Model  
250  
V
(Note: Microdot may be in either location)  
THERMAL RESISTANCE RATINGS  
Rating  
Symbol  
Max  
102  
200  
140  
Unit  
ORDERING INFORMATION  
Junction−to−Lead – Steady State (Note 1)  
Junction−to−Ambient – Steady State (Note 1)  
Junction−to−Ambient − t v 5 s (Note 1)  
R
°C/W  
q
JL  
Device  
Package  
Shipping†  
R
q
JA  
NTJS4405NT1  
NTJS4405NT1G  
SC−88 3000 / Tape & Reel  
R
q
JA  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
SC−88 3000 / Tape & Reel  
(Pb−Free)  
NTJS4405NT4  
SC−88  
10,000 / Tape & Reel  
1. Surface mounted on FR4 board using 1 in sq pad size  
NTJS4405NT4G  
SC−88 10,000 / Tape & Reel  
(Pb−Free)  
(Cu area = 1.127 in sq [1 oz] including traces).  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 4  
NTJS4405N/D  
12345

中文翻译

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NTJS4405NT1G 替代型号

型号 品牌 替代类型 描述 数据表
NTJS4405NT4 ONSEMI

类似代替

 Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTJS4405NT1 ONSEMI

类似代替

 Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTJS4405NT4G ONSEMI

功能相似

 Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88

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