NTJS3157NT4G

更新时间： 2024-11-05 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	134K
描述
Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88

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NTJS3157NT4G 数据手册

NTJS3157N

Trench Power MOSFET

20 V, 4.0 A, Single N−Channel, SC−88

Features

• Leading Trench Technology for Low R

Extending Battery Life

• Fast Switching for Increased Circuit Efficiency

DS(ON)

http://onsemi.com

• SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board

Typ

I Max

(BR)DSS

DS(on)

Utilization, Same as SC−70−6

45 mW @ 4.5 V

55 mW @ 2.5 V

70 mW @ 1.8 V

• Pb−Free Packages are Available

4.0 A

20 V

Applications

• DC−DC Conversion

SC−88 (SOT−363)

• Low Side Load Switch

• Cell Phones, Computing, Digital Cameras, MP3s and PDAs

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

DSS

8.0

3.2

2.3

4.0

1.0

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

T = 25 °C

Steady

State

T = 85 °C

Top View

t ≤ 5 s T = 25 °C

Power Dissipation

(Note 1)

Steady

State

T = 25 °C

MARKING DIAGRAM &

PIN ASSIGNMENT

Pulsed Drain Current

t = 10 ms

Operating Junction and Storage Temperature

T ,

STG

−55 to

150

°C

T92 M G

Source Current (Body Diode)

1.6

SOT−363

CASE 419B

STYLE 28

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

THERMAL RESISTANCE RATINGS (Note 1)

T92

= Device Code

= Date Code

= Pb−Free Package

Parameter

Symbol

Max

125

Unit

Junction−to−Ambient – Steady State

Junction−to−Ambient − t ≤ 5 s

Junction−to−Lead – Steady State

°C/W

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

Publication Order Number:

February, 2006 − Rev. 2

NTJS3157N/D

12 3 4 5 6

中文翻译

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NTJS3157NT4G 替代型号

型号	品牌	替代类型	描述	数据表
NTJS3157NT4	ONSEMI	完全替代	Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88
NTJS3157NT2	ONSEMI	完全替代	Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88
NTJS3157NT1	ONSEMI	类似代替	Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88

与NTJS3157NT4G相关器件

型号	品牌	获取价格	描述	数据表
NTJS4151P	ONSEMI	获取价格	Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88
NTJS4151PT1	ONSEMI	获取价格	Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88
NTJS4151PT1G	ONSEMI	获取价格	Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88
NTJS4160N	ONSEMI	获取价格	High Efficiency DC-DC Converters
NTJS4160NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single N-Channel, SC-88
NTJS4405N	ONSEMI	获取价格	Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTJS4405NT1	ONSEMI	获取价格	Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTJS4405NT1G	ONSEMI	获取价格	Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTJS4405NT4	ONSEMI	获取价格	Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTJS4405NT4G	ONSEMI	获取价格	Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88

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