Datasheet > NTJS4151P

NTJS4151P

更新时间： 2024-11-05 03:45:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	144K
描述
Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88

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NTJS4151P 数据手册

NTJS4151P

Trench Power MOSFET

−20 V, −4.2 A, Single P−Channel, SC−88

Features

• Leading Trench Technology for Low R

Extending Battery Life

• SC−88 Small Outline (2x2 mm) for Maximum Circuit Board

Utilization, Same as SC−70−6

http://onsemi.com

DS(ON)

Typ

I Max

(BR)DSS

DS(on)

47 mW @ −4.5 V

70 mW @ −2.5 V

180 mW @ −1.8 V

• Gate Diodes for ESD Protection

−4.2 A

−20 V

• Pb−Free Package is Available

Applications

• High Side Load Switch

SC−88 (SOT−363)

• Cell Phones, Computing, Digital Cameras, MP3s and PDAs

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value

−20

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25 °C

State

−3.3

−2.4

−4.2

1.0

T = 85 °C

Top View

t ≤ 5 s T = 25 °C

MARKING DIAGRAM &

PIN ASSIGNMENT

Power Dissipation

(Note 1)

Steady T = 25 °C

State

Pulsed Drain Current

t = 10 ms

−10

Operating Junction and Storage Temperature

T ,

−55 to

150

°C

STG

TY M G

SC−88/SOT−363

CASE 419B

Source Current (Body Diode)

−1.3

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

ESD

Human Body Model (HBM)

ESD

4000

= Device Code

= Date Code

= Pb−Free Package

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Symbol

Max

125

Unit

(Note: Microdot may be in either location)

Junction−to−Ambient – Steady State

Junction−to−Ambient − t ≤ 5 s

Junction−to−Lead – Steady State

°C/W

ORDERING INFORMATION

†

Device

Package

Shipping

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

NTJS4151PT1

NTJS4151PT1G

SC−88

3000 / Tape & Reel

SC−88

(Pb−Free)

1. Surface mounted on FR4 board using 1 in sq pad size

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(Cu area = 1.127 in sq [1 oz] including traces).

Publication Order Number:

February, 2006 − Rev. 1

NTJS4151P/D

12 3 4 5

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与NTJS4151P相关器件

型号	品牌	获取价格	描述	数据表
NTJS4151PT1	ONSEMI	获取价格	Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88
NTJS4151PT1G	ONSEMI	获取价格	Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88
NTJS4160N	ONSEMI	获取价格	High Efficiency DC-DC Converters
NTJS4160NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 3.2 A, Single N-Channel, SC-88
NTJS4405N	ONSEMI	获取价格	Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTJS4405NT1	ONSEMI	获取价格	Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTJS4405NT1G	ONSEMI	获取价格	Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTJS4405NT4	ONSEMI	获取价格	Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTJS4405NT4G	ONSEMI	获取价格	Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
NTK	TOKEN	获取价格	High Voltage Network Dividers

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