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NTJD4001NT1G PDF预览

NTJD4001NT1G

更新时间: 2024-10-31 21:54:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 50K
描述
Small Signal MOSFET

NTJD4001NT1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.56
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):0.25 A最大漏极电流 (ID):0.25 A
最大漏源导通电阻:2.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):12 pFJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.272 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NTJD4001NT1G 数据手册

 浏览型号NTJD4001NT1G的Datasheet PDF文件第2页浏览型号NTJD4001NT1G的Datasheet PDF文件第3页浏览型号NTJD4001NT1G的Datasheet PDF文件第4页浏览型号NTJD4001NT1G的Datasheet PDF文件第5页浏览型号NTJD4001NT1G的Datasheet PDF文件第6页 
NTJD4001N  
Small Signal MOSFET  
30 V, 250 mA, Dual N−Channel, SC−88  
Features  
Low Gate Charge for Fast Switching  
Small Footprint − 30% Smaller than TSOP−6  
ESD Protected Gate  
http://onsemi.com  
V
R
TYP  
I Max  
D
(BR)DSS  
DS(on)  
Pb−Free Package for Green Manufacturing (G Suffix)  
1.0 W @ 4.0 V  
1.5 W @ 2.5 V  
Applications  
250 mA  
30 V  
Low Side Load Switch  
Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC  
Buck Converters  
Level Shifts  
SOT−363  
SC−88 (6 LEADS)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
S
1
G
1
D
2
1
6
5
4
D
1
Parameter  
Drain−to−Source Voltage  
Symbol  
Value Units  
V
DSS  
30  
V
V
2
3
G
S
2
Gate−to−Source Voltage  
V
GS  
±20  
250  
180  
272  
Continuous Drain  
Current (Note 1)  
Steady T = 25 °C  
I
D
mA  
A
State  
T = 85 °C  
A
2
Power Dissipation  
(Note 1)  
Steady T = 25 °C  
State  
P
D
mW  
A
Top View  
Pulsed Drain Current  
t =10 µs  
I
600  
mA  
DM  
Operating Junction and Storage Temperature  
T , T  
−55 to  
150  
MARKING DIAGRAM  
°C  
J
STG  
6
Source Current (Body Diode)  
I
250  
260  
mA  
S
1
TED  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
°C  
T
L
SC−88 / SOT−363  
CASE 419B  
STYLE 26  
1. Surface mounted on FR4 board using 1 in sq. pad size  
TE  
D
= Device Code  
= Date Code  
(Cu area = 1.127 in sq. [1 oz] including traces).  
PIN ASSIGNMENT  
1
6
Source−1  
Gate−1  
Drain−1  
Gate−2  
Drain−2  
Source−2  
Top View  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NTJD4001NT1  
SC−88  
3000 Units/Reel  
3000 Units/Reel  
SC−88  
(Pb−Free)  
NTJD4001NT1G  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
August, 2003 − Rev. 0  
NTJD4001N/D  

NTJD4001NT1G 替代型号

型号 品牌 替代类型 描述 数据表
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