是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SC-70 | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 0.56 |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 0.25 A | 最大漏极电流 (ID): | 0.25 A |
最大漏源导通电阻: | 2.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 12 pF | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.272 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTJD4001NT1 | ONSEMI |
类似代替 |
Small Signal MOSFET | |
NVTJD4001NT1G | ONSEMI |
功能相似 |
Small Signal MOSFET | |
NTJD5121NT1G | ONSEMI |
功能相似 |
Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTJD4001NT2G | ROCHESTER |
获取价格 |
250mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 419B-02, SC-88 | |
NTJD4001NT2G | ONSEMI |
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Dual N-Channel Small Signal MOSFET 30V 250mA | |
NTJD4105C | ONSEMI |
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Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC− | |
NTJD4105CT1 | ONSEMI |
获取价格 |
Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC− | |
NTJD4105CT1G | ONSEMI |
获取价格 |
Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC− | |
NTJD4105CT2 | ONSEMI |
获取价格 |
Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC− | |
NTJD4105CT2G | ONSEMI |
获取价格 |
Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC− | |
NTJD4105CT4 | ONSEMI |
获取价格 |
Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC− | |
NTJD4105CT4G | ONSEMI |
获取价格 |
Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC− | |
NTJD4152P | ONSEMI |
获取价格 |
Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 |