Datasheet > NTJD4401N_08

NTJD4401N_08

更新时间： 2024-09-15 10:30:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	81K
描述
Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection

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NTJD4401N_08 数据手册

NTJD4401N

Small Signal MOSFET

20 V, Dual N-Channel, SC-88

ESD Protection

Features

•ꢀSmall Footprint (2 x 2 mm)

•ꢀLow Gate Charge N-Channel Device

•ꢀESD Protected Gate

•ꢀSame Package as SC-70 (6 Leads)

•ꢀPb-Free Packages are Available

Applications

http://onsemi.com

Typ

I Max

(BR)DSS

DS(on)

0.22 W @ 4.5 V

0.32 W @ 2.5 V

20 V

0.775 A

•ꢀLoad Power switching

0.51 W @ 1.8 V

•ꢀLi-Ion Battery Supplied Devices

•ꢀCell Phones, Media Players, Digital Cameras, PDAs

•ꢀDC-DC Conversion

SC-88 (SOT-363)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

DSS

Gate-to-Source Voltage

Continuous Drain

Current

Steady T = 25°C

0.63

0.46

0.27

0.14

0.91

0.65

0.55

0.29

1.2

State

T = 85°C

(Based on R

)

Power Dissipation

(Based on R

Steady T = 25°C

)

State

Top View

T = 85°C

Continuous Drain

Current

Steady T = 25°C

State

T = 85°C

(Based on R

)

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

Power Dissipation

(Based on R

Steady T = 25°C

)

State

T = 85°C

Pulsed Drain Current

t ≤10 ms

Operating Junction and Storage Temperature

T , T

-55 to

150

°C

STG

TD MꢀG

SC-88/SOT-363

CASE 419B

STYLE 28

Continuous Source Current (Body Diode)

0.63

260

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

S1 G1 D2

= Device Code

= Date Code

= Pb-Free Package

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Symbol Typ

Max Units

460 °C/W

226

(Note: Microdot may be in either location)

Junction-to-Ambient – Steady State

Junction-to-Lead (Drain) – Steady State

400

194

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.

January, 2008 - Rev. 4

Publication Order Number:

NTJD4401N/D

12 3 4 5

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与NTJD4401N_08相关器件

型号	品牌	获取价格	描述	数据表
NTJD4401NT1	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT1G	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT2	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT2G	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT4	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT4G	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4402NT1	ONSEMI	获取价格	100mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 419B-02, SC-88, 3 PIN
NTJD5121N	ONSEMI	获取价格	Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88
NTJD5121NT1G	ONSEMI	获取价格	Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88
NTJD5121NT2G	ONSEMI	获取价格	Power MOSFET 60 V, 295 mA, Dual NâChannel w

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