Datasheet > NTJD5121N

NTJD5121N

更新时间： 2024-09-15 06:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	77K
描述
Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88

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NTJD5121N 数据手册

NTJD5121N

Power MOSFET

60 V, 295 mA, Dual N-Channel with ESD

Protection, SC-88

Features

•ꢀLow R

DS(on)

http://onsemi.com

•ꢀLow Gate Threshold

•ꢀLow Input Capacitance

•ꢀESD Protected Gate

•ꢀThis is a Pb-Free Device

MAX

I Max

(BR)DSS

DS(on)

1.6 W @ 10 V

2.5 W @ 4.5 V

295 mA

60 V

Applications

•ꢀLow Side Load Switch

•ꢀDC-DC Converters (Buck and Boost Circuits)

SC-88 (SOT-363)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain-to-Source Voltage

Symbol

Value Units

DSS

Gate-to-Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25°C

295

212

304

219

250

State

T = 85°C

t ≤ 5 s T = 25°C

Top View

T = 85°C

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

Power Dissipation

(Note 1)

Steady T = 25°C

State

t ≤ 5 s

266

900

Pulsed Drain Current

t = 10 ms

TF MꢀG

SC-88/SOT-363

CASE 419B

STYLE 26

Operating Junction and Storage Temperature

T , T

-55 to

150

°C

STG

Source Current (Body Diode)

210

260

S1 G1 D2

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

= Device Code

= Date Code

= Pb-Free Package

Gate-Source ESD Rating

(HBM, Method 3015)

ESD

1400

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

(Note: Microdot may be in either location)

ORDERING INFORMATION

THERMAL RESISTANCE RATINGS

†

Device

Package

Shipping

Parameter

Symbol

Value Units

NTJD5121NT1G

SC-88

(Pb-Free)

3000 / Tape & Reel

Junction-to-Ambient – Steady State

Junction-to-Ambient – t ≤ 5 s

500

470

°C/W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [2 oz] including traces).

April, 2008 - Rev. 1

Publication Order Number:

NTJD5121N/D

12 3 4 5

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与NTJD5121N相关器件

型号	品牌	获取价格	描述	数据表
NTJD5121NT1G	ONSEMI	获取价格	Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88
NTJD5121NT2G	ONSEMI	获取价格	Power MOSFET 60 V, 295 mA, Dual NâChannel w
NTJS3151P	ONSEMI	获取价格	Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88
NTJS3151PT1	ONSEMI	获取价格	Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88
NTJS3151PT1G	ONSEMI	获取价格	Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88
NTJS3151PT2	ONSEMI	获取价格	Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88
NTJS3151PT2G	ONSEMI	获取价格	Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88
NTJS3157N	ONSEMI	获取价格	Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88
NTJS3157NT1	ONSEMI	获取价格	Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88
NTJS3157NT1G	ONSEMI	获取价格	Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88

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