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NTJD4402NT1

更新时间： 2024-09-15 20:47:11
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
4页 38K
描述
100mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 419B-02, SC-88, 3 PIN

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NTJD4402NT1 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SC-88
包装说明：SMALL OUTLINE, R-PDSO-G6针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.92配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压：30 V最大漏极电流 (ID)：0.1 A
最大漏源导通电阻：2.7 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G6JESD-609代码：e0
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTJD4402NT1 数据手册

 浏览型号NTJD4402NT1的Datasheet PDF文件第2页浏览型号NTJD4402NT1的Datasheet PDF文件第3页浏览型号NTJD4402NT1的Datasheet PDF文件第4页 
NTJD4402NT1  
Product Preview  
Power MOSFET  
30 V, N-Channel, ESD Protected, SC-88  
Dual  
This new N- Channel device was designed using  
ON Semiconductor’s leading edge planar technology to deliver fast  
http://onsemi.com  
switching and relatively low R  
performance.  
DS(on)  
VBR(DSS) = 30 VOLTS  
RDS(on) (max) = 2.7 W @  
There are two devices conveniently packaged in industry standard  
SC- 88 (6- leads) to increase board density and facilitate system integration.  
This device is particularly suited for high speed switching or load  
switch applications in single or dual cell Li-Ion battery supplied  
devices such as cell phones, media players, video games, PDA’s, etc.  
VGS = 4.5 V, ID = 10 mA  
RDS(on) (max) = 4.0 W @  
VGS = 2.5 V, ID = 1.0 mA  
Features & Benefits  
• Low Gate Charge for Fast Switching  
SOT-363 (N-Channel)  
SC-88 (6-LEADS)  
• SC-88 Package Provides Excellent Thermal Performance  
• Minimum Breakdown Voltage Rating of 30 V  
• Surface Mount SC-88 Package Saves Board Space  
• ESD Protected Gate  
• Small Footprint: 45% Smaller than TSOP-6  
• Low Voltage Drive (2.5 V) to Fascilitate Drive Circuit Design  
• ESD HBM Level IB, MM Class A  
S
1
2
3
6
5
4
D
1
1
1
2
G
D
G
2
• Lead Free Package to Facilitate “Green Manufacturing” Compliance  
S
2
Applications  
• Load Switch  
• Power Management  
• Battery Switch for 2 Cell Li-Ion Devices  
Top View  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current  
Symbol  
Value  
30  
Unit  
V
6
1
6
V
DSS  
Source-1  
Gate-1  
Drain-1  
Gate-2  
1
V
GS  
±20  
V
SC-88  
CASE 419B  
STYLE 1  
- Continuous @ T = 25°C (Note 1)  
I
D
100  
600  
mA  
mW  
Drain-2  
Source-2  
A
- Pulsed Drain Current (t = 10 µs) (Note 2)  
I
DM  
Top View  
Steady State Power Dissipation  
P
D
200  
mW  
N20 = Specific Device Code  
= Date Code  
@ T = 25°C (Note 1)  
A
D
Operating Junction and Storage Temperature  
Range  
T , T  
-55 to  
150  
°C  
J
stg  
ORDERING INFORMATION  
Continuous Source Current (Body Diode)  
I
200  
260  
mA  
S
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 seconds)  
T
°C  
Device  
Package  
Shipping  
3000/Tape & Reel  
L
NTJD4402NT1  
SC-88  
1. Surface-mounted on FR4 board using 1″ sq pad size (Cu area = 1.127 in sq  
[1 oz] including traces)  
2. Surface-mounted on FR4 board using the minimum recommended pad size  
(Cu area = TBD in sq)  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
April, 2003 - Rev. 0  
NTJD4402NT1/D  
1234

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