Datasheet > NTJD4158C_15

NTJD4158C_15

更新时间： 2024-09-16 01:16:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	91K
描述
Small Signal MOSFET

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NTJD4158C_15 数据手册

NTJD4158C, NVJD4158C

Small Signal MOSFET

30 V/−20 V, +0.25/−0.88 A,

Complementary, SC−88

Features

• Leading 20 V Trench for Low R

• ESD Protected Gate

Performance

DS(on)

www.onsemi.com

• SC−88 Package for Small Footprint (2 x 2 mm)

Typ

I Max

(BR)DSS

DS(on)

• NV Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

1.0 W @ 4.5 V

1.5 W @ 2.5 V

N−Ch

30 V

0.25 A

215 mW @ −4.5 V

345 mW @ −2.5 V

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

P−Ch

−20 V

−0.88 A

Compliant

Applications

• DC−DC Conversion

SC−88 (SOT−363)

(6−Leads)

• Load/Power Management

• Load Switch

• Cell Phones, MP3s, Digital Cameras, PDAs

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

N−Ch

P−Ch

N−Ch

P−Ch

−20

DSS

Gate−to−Source Voltage

(Top View)

N−Channel

Continuous Drain

Current (Note 1)

T = 25°C

0.25

Steady

State

MARKING DIAGRAM &

PIN ASSIGNMENT

T = 85°C

0.18

−0.88

−0.63

0.27

D1 G2 S2

P−Channel

Continuous Drain

Current (Note 1)

T = 25°C

Steady

State

T = 85°C

XXX MG

Power Dissipation

(Note 1)

Steady

State

SC−88 (SOT−363)

CASE 419B

T = 25°C

STYLE 26

Pulsed Drain Cur-

rent

N−Ch

P−Ch

0.5

S1 G1 D2

tp = 10 ms

−3.0

XXX

= Specific Device Code

= Date Code

= Pb−Free Package

Operating Junction and Storage Temperature

T , T

−55 to

150

°C

stg

Source Current (Body Diode)

N−Ch

P−Ch

0.25

−0.48

260

(Note: Microdot may be in either location)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

THERMAL RESISTANCE RATINGS

Parameter

dimensions section on page 6 of this data sheet.

Symbol

Max

Unit

Junction−to−Ambient – Steady State (Note 1)

460

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

Publication Order Number:

Febuary, 2015 − Rev. 5

NTJD4158C/D

12 3 4 5 6 7

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与NTJD4158C_15相关器件

型号	品牌	获取价格	描述	数据表
NTJD4158CT1G	ONSEMI	获取价格	Small Signal MOSFET 30 V/−20 V, +0.25/−0.88 A, Complementary, SC−88
NTJD4158CT2G	ONSEMI	获取价格	Small Signal MOSFET
NTJD4401N	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401N_06	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401N_08	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT1	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT1G	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT2	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT2G	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT4	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection

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