Datasheet > NTJD4158CT1G

NTJD4158CT1G

更新时间： 2024-11-01 10:30:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	143K
描述
Small Signal MOSFET 30 V/−20 V, +0.25/−0.88 A, Complementary, SC−88

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NTJD4158CT1G 数据手册

NTJD4158C

Small Signal MOSFET

30 V/−20 V, +0.25/−0.88 A,

Complementary, SC−88

Features

http://onsemi.com

• Leading 20 V Trench for Low R

• ESD Protected Gate

• SC−88 Package for Small Footprint (2 x 2 mm)

• This is a Pb−Free Device

Performance

DS(on)

Typ

I Max

(BR)DSS

DS(on)

1.0 W @ 4.5 V

1.5 W @ 2.5 V

N−Ch

30 V

0.25 A

Applications

215 mW @ −4.5 V

345 mW @ −2.5 V

P−Ch

−20 V

−0.88 A

• DC−DC Conversion

• Load/Power Management

• Load Switch

SC−88 (SOT−363)

(6−Leads)

• Cell Phones, MP3s, Digital Cameras, PDAs

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

DSS

N−Ch

P−Ch

N−Ch

P−Ch

−20

Gate−to−Source Voltage

N−Channel

Continuous Drain

Current (Note 1)

T = 25°C

0.25

Steady

State

T = 85°C

0.18

−0.88

−0.63

0.27

(Top View)

P−Channel

Continuous Drain

Current (Note 1)

T = 25°C

MARKING DIAGRAM &

PIN ASSIGNMENT

Steady

State

T = 85°C

Power Dissipation

(Note 1)

Steady

State

D1 G2 S2

T = 25°C

Pulsed Drain Cur-

rent

N−Ch

P−Ch

0.5

TCD M G

tp = 10 ms

SC−88 (SOT−363)

CASE 419B

−3.0

Operating Junction and Storage Temperature

T , T

−55 to

150

°C

STYLE 26

stg

S1 G1 D2

Source Current (Body Diode)

N−Ch

P−Ch

0.25

−0.48

260

TCD

= Specific Device Code

= Date Code

= Pb−Free Package

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

°C

(Note: Microdot may be in either location)

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

ORDERING INFORMATION

Junction−to−Ambient – Steady State (Note 1)

460

°C/W

Device

Package

Shipping†

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size

NTJD4158CT1G

SC−88

(Pb−Free)

3000 Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(Cu area = 1.127 in sq [1 oz] including traces).

Publication Order Number:

March, 2009 − Rev. 2

NTJD4158C/D

12 3 4 5 6 7

中文翻译

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NTJD4158CT1G 替代型号

型号	品牌	替代类型	描述	数据表
NTJD4158CT2G	ONSEMI	功能相似	Small Signal MOSFET

与NTJD4158CT1G相关器件

型号	品牌	获取价格	描述	数据表
NTJD4158CT2G	ONSEMI	获取价格	Small Signal MOSFET
NTJD4401N	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401N_06	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401N_08	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT1	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT1G	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT2	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT2G	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT4	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT4G	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection

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