Datasheet > NTJD4401N_06

NTJD4401N_06

更新时间： 2024-11-01 03:45:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	66K
描述
Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection

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NTJD4401N_06 数据手册

NTJD4401N

Small Signal MOSFET

20 V, Dual N−Channel, SC−88

ESD Protection

Features

http://onsemi.com

• Small Footprint (2 x 2 mm)

• Low Gate Charge N−Channel Device

• ESD Protected Gate

• Same Package as SC−70 (6 Leads)

• Pb−Free Packages are Available

Typ

I Max

(BR)DSS

DS(on)

0.22 W @ 4.5 V

0.32 W @ 2.5 V

8 V

0.775 A

0.51 W @ 1.8 V

Applications

• Load Power switching

SC−88 (SOT−363)

• Li−Ion Battery Supplied Devices

• Cell Phones, Media Players, Digital Cameras, PDAs

• DC−DC Conversion

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value Units

DSS

Gate−to−Source Voltage

Continuous Drain

Current

Steady T = 25°C

0.63

0.46

0.27

0.14

0.91

0.65

0.55

0.29

1.2

State

Top View

T = 85°C

(Based on R

)

Power Dissipation

(Based on R

Steady T = 25°C

)

State

T = 85°C

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

Continuous Drain

Current

Steady T = 25°C

State

T = 85°C

(Based on R

)

Power Dissipation

(Based on R

Steady T = 25°C

)

State

TD M G

SC−88/SOT−363

CASE 419B

STYLE 28

T = 85°C

Pulsed Drain Current

t ≤10 ms

Operating Junction and Storage Temperature

T , T

−55 to

150

°C

STG

S1 G1 D2

Continuous Source Current (Body Diode)

0.63

260

= Device Code

= Date Code

= Pb−Free Package

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

(Note: Microdot may be in either location)

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Symbol Typ

Max Units

460 °C/W

226

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

Junction−to−Ambient – Steady State

Junction−to−Lead (Drain) – Steady State

400

194

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.

Publication Order Number:

November, 2006 − Rev. 3

NTJD4401N/D

12 3 4 5

中文翻译

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与NTJD4401N_06相关器件

型号	品牌	获取价格	描述	数据表
NTJD4401N_08	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT1	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT1G	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT2	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT2G	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT4	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4401NT4G	ONSEMI	获取价格	Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
NTJD4402NT1	ONSEMI	获取价格	100mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 419B-02, SC-88, 3 PIN
NTJD5121N	ONSEMI	获取价格	Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88
NTJD5121NT1G	ONSEMI	获取价格	Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88

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