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NTJD4105CT4G

更新时间： 2024-10-31 03:45:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 74K
描述
Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88

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NTJD4105CT4G 数据手册

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NTJD4105C  
Small Signal MOSFET  
20 V / −8.0 V, Complementary,  
+0.63 A / −0.775 A, SC−88  
Features  
• Complementary N and P Channel Device  
http://onsemi.com  
• Leading −8.0 V Trench for Low R  
Performance  
DS(on)  
• ESD Protected Gate − ESD Rating: Class 1  
• SC−88 Package for Small Footprint (2 x 2 mm)  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
0.29 W @ 4.5 V  
0.36 W @ 2.5 V  
0.22 W @ −4.5 V  
0.32 W @ −2.5 V  
N−Ch 20 V  
0.63 A  
• Pb−Free Package May be Available. The G−Suffix Denotes a  
Pb−Free Lead Finish  
Applications  
P−Ch −8.0 V  
−0.775 A  
• DC−DC Conversion  
• Load/Power Switching  
0.51 W @ −1.8 V  
• Single or Dual Cell Li−Ion Battery Supplied Devices  
• Cell Phones, MP3s, Digital Cameras, PDAs  
SOT−363  
SC−88 (6−LEADS)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value  
Unit  
S
1
G
1
D
2
1
6
5
4
D
1
N−Ch  
P−Ch  
N−Ch  
P−Ch  
V
20  
−8.0  
±12  
V
DSS  
Gate−to−Source Voltage  
V
V
A
GS  
2
3
G
2
±8.0  
0.63  
0.46  
−0.775  
−0.558  
0.91  
0.65  
−1.1  
−0.8  
±1.2  
0.27  
0.14  
0.55  
0.29  
Continuous Drain Current  
− Steady State  
N−Ch T =25°C  
I
A
D
T =85°C  
A
S
2
(Based on R  
)
q
JA  
P−Ch T =25°C  
A
T =85°C  
A
Top View  
Continuous Drain Current  
− Steady State  
N−Ch T =25°C  
A
T =85°C  
A
6
(Based on R  
)
q
JL  
P−Ch T =25°C  
A
1
T =85°C  
A
SC−88 (SOT−363)  
CASE 419B  
Style 26  
Pulsed Drain Current  
tp≤10 ms  
I
A
DM  
Power Dissipation − Steady State  
T =25°C  
A
P
W
D
(Based on R  
)
q
JA  
T =85°C  
A
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Power Dissipation − Steady State  
(Based on R  
T =25°C  
A
)
q
JL  
T =85°C  
A
1
6
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
Source−1  
Gate−1  
Drain−1  
Gate−2  
J
T
STG  
Source Current (Body Diode)  
N−Ch  
P−Ch  
I
S
0.63  
−0.775  
260  
A
Drain−2  
Source−2  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
L
°C  
Top View  
TC  
D
= Specific Device Code  
= Date Code  
THERMAL RESISTANCE RATINGS (Note 1)  
Junction−to−Ambient  
– Steady State  
Typ  
Max  
Typ  
R
400  
460  
194  
226  
°C/W  
q
JA  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
Junction−to−Lead (Drain)  
– Steady State  
R
q
JL  
Max  
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
January, 2004 − Rev. 1  
NTJD4105C/D  
 
12345678

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NTJD4105CT4G 替代型号

型号 品牌 替代类型 描述 数据表
NTJD4105CT4 ONSEMI

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 Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−
NTJD4105CT2G ONSEMI

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 Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−
NTJD4105CT2 ONSEMI

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 Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−

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