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NTJD4152PT1G

更新时间： 2024-11-01 06:00:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 89K
描述
Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88

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NTJD4152PT1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-70包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：0.96配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：0.88 A
最大漏极电流 (ID)：0.88 A最大漏源导通电阻：0.26 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：0.35 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTJD4152PT1G 数据手册

 浏览型号NTJD4152PT1G的Datasheet PDF文件第2页浏览型号NTJD4152PT1G的Datasheet PDF文件第3页浏览型号NTJD4152PT1G的Datasheet PDF文件第4页浏览型号NTJD4152PT1G的Datasheet PDF文件第5页 
NTJD4152P  
Trench Small Signal  
MOSFET  
20 V, 0.88 A, Dual P-Channel,  
ESD Protected SC-88  
http://onsemi.com  
Features  
•ꢀLeading Trench Technology for Low R  
Performance  
DS(ON)  
V
R
Typ  
I Max  
D
(BR)DSS  
DS(on)  
•ꢀSmall Footprint Package (SC70-6 Equivalent)  
•ꢀESD Protected Gate  
215 mW @ -4.5 V  
345 mW @ -2.5 V  
•ꢀPb-Free Package is Available  
Applications  
-20 V  
-0.88 A  
600 mW @ -1.8 V  
•ꢀLoad/Power Management  
•ꢀCharging Circuits  
•ꢀLoad Switching  
S
G
D
1
2
6
5
4
D
1
1
•ꢀCell Phones, Computing, Digital Cameras, MP3s and PDAs  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
G
S
1
2
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
-20  
Unit  
V
V
DSS  
Gate-to-Source Voltage  
V
12  
V
3
GS  
2
2
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
I
-0.88  
-0.63  
0.272  
0.141  
-1.0  
A
A
D
State  
T = 85°C  
A
Top View  
Power Dissipation  
(Note 1)  
Steady T = 25°C  
P
W
A
A
D
State  
T = 85°C  
A
MARKING DIAGRAM &  
PIN ASSIGNMENT  
D1 G2 S2  
Continuous Drain  
Current (Note 2)  
t v 5 s T = 25°C  
I
D
A
T = 85°C  
A
-0.72  
0.35  
0.181  
3.0  
6
Power Dissipation  
(Note 2)  
t v 5 s T = 25°C  
P
W
A
D
1
T = 85°C  
A
TK MꢀG  
SC-88/SOT-363  
CASE 419B  
STYLE 28  
G
Pulsed Drain Current  
t ≤ 10 ms  
I
A
DM  
Operating Junction and Storage Temperature  
T ,  
J
-55 to  
150  
°C  
1
T
STG  
S1 G1 D2  
Continuous Source Current (Body Diode)  
I
-0.48  
260  
A
S
TK  
M
G
= Device Code  
= Date Code  
= Pb-Free Package  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
°C  
T
L
THERMAL RESISTANCE RATINGS (Note 1)  
Parameter  
(Note: Microdot may be in either location)  
Symbol Max Unit  
ORDERING INFORMATION  
Junction-to-Ambient – Steady State  
Junction-to-Ambient - t v 5 s  
Junction-to-Lead – Steady State  
R
R
460 °C/W  
357  
q
q
JA  
JA  
Device  
Package  
Shipping  
R
226  
NTJD4152PT1  
NTJD4152PT1G  
SOT-363  
3000 Units/Reel  
3000 Units/Reel  
q
JL  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 in sq pad size  
SOT-363  
(Pb-Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
(Cu area = 1.127 in sq [1 oz] including traces), steady state.  
2. Surface mounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [1 oz] including traces), t v 5 s.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
August, 2007 - Rev. 2  
1
Publication Order Number:  
NTJD4152/D  
 
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NTJD4152PT1G 替代型号

型号 品牌 替代类型 描述 数据表
NTJD4152PT1 ONSEMI

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 Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88

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