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NTJD3158CT4G PDF预览

NTJD3158CT4G

更新时间: 2024-09-13 06:00:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 97K
描述
Power MOSFET 20 V, +0.63/-0.82 A, SC-88 Complementary, ESD Protected

NTJD3158CT4G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.48
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):0.82 A最大漏极电流 (ID):0.63 A
最大漏源导通电阻:0.375 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):5 pFJESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON

NTJD3158CT4G 数据手册

 浏览型号NTJD3158CT4G的Datasheet PDF文件第2页浏览型号NTJD3158CT4G的Datasheet PDF文件第3页浏览型号NTJD3158CT4G的Datasheet PDF文件第4页浏览型号NTJD3158CT4G的Datasheet PDF文件第5页浏览型号NTJD3158CT4G的Datasheet PDF文件第6页浏览型号NTJD3158CT4G的Datasheet PDF文件第7页 
NTJD3158C  
Power MOSFET  
20 V, +0.63/-0.82 A,  
SC-88 Complementary, ESD Protected  
Features  
ꢀComplementary N- and P-Channel MOSFET  
ꢀSmall Size Dual SC-88 Package  
http://onsemi.com  
ꢀReduced Gate Charge to Improve Switching Response  
ꢀIndependently Connected Devices to Provide Design Flexibility  
ꢀThis is a Pb-Free Device  
V
R
Max  
I Max  
D
(BR)DSS  
DS(on)  
375 mW @ 4.5 V  
445 mW @ 2.5 V  
300 mW @ -4.5 V  
500 mW @ -2.5 V  
N-Ch  
20 V  
0.63 A  
Applications  
P-Ch  
-20 V  
-0.82 A  
ꢀDC-DC Conversion Circuits  
ꢀLoad/Power Switching with Level Shift  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
SC-88 (SOT-363)  
(6-Leads)  
J
Parameter  
Drain-to-Source Voltage  
Symbol Value  
Unit  
V
V
DSS  
20  
12  
S
1
2
3
6
5
D
1
1
1
2
Gate-to-Source Voltage  
V
GS  
V
N-Ch  
N-Channel  
Continuous Drain  
Current (Note 1)  
I
D
A
T = 25°C  
0.63  
0.46  
0.72  
-0.82  
-0.59  
-0.93  
0.27  
0.35  
1.3  
A
Steady State  
T = 85°C  
A
G
D
G
2
t 5 s  
T = 25°C  
A
P-Ch  
P-Channel  
Continuous Drain  
Current (Note 1)  
I
D
A
T = 25°C  
A
Steady State  
4
S
2
T = 85°C  
A
t 5 s  
Steady State  
t 5 s  
T = 25°C  
A
(Top View)  
Power Dissipation  
(Note 1)  
P
D
W
A
T = 25°C  
A
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Pulsed Drain  
Current  
I
DM  
N-Ch  
tp = 10 ms  
D1 G2 S2  
6
P-Ch  
-1.6  
1
Operating Junction and Storage Temperature  
Source Current (Body Diode)  
T , T  
J
-55 to  
150  
°C  
stg  
TG MG  
SC-88 (SOT-363)  
CASE 419B  
STYLE 26  
G
I
S
0.46  
260  
A
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
°C  
1
S1 G1 D2  
TG  
M
G
= Specific Device Code  
= Date Code  
= Pb-Free Package  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
460  
357  
226  
Unit  
°C/W  
Junction-to-Ambient – Steady State (Note 1)  
Junction-to-Ambient – t 5 s (Note 1)  
Junction-to-Lead (Drain) – Steady State (Note 1)  
R
R
q
q
JA  
JA  
(Note: Microdot may be in either location)  
R
ORDERING INFORMATION  
q
JL  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 in sq pad size  
Device  
Package  
Shipping†  
NTJD3158CT1G  
SC-88  
(Pb-Free)  
3000/Tape & Reel  
(Cu area = 1.127 in sq [1 oz] including traces).  
NTJD3158CT4G  
SC-88  
(Pb-Free)  
10000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©ꢀ Semiconductor Components Industries, LLC, 2008  
January, 2008 - Rev. 0  
1
Publication Order Number:  
NTJD3158C/D  
 

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