是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SC-70 |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.13 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 0.25 A |
最大漏源导通电阻: | 2.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 12 pF | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTJD4001NT1 | ONSEMI |
获取价格 |
Small Signal MOSFET | |
NTJD4001NT1G | ONSEMI |
获取价格 |
Small Signal MOSFET | |
NTJD4001NT2G | ROCHESTER |
获取价格 |
250mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 419B-02, SC-88 | |
NTJD4001NT2G | ONSEMI |
获取价格 |
Dual N-Channel Small Signal MOSFET 30V 250mA | |
NTJD4105C | ONSEMI |
获取价格 |
Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC− | |
NTJD4105CT1 | ONSEMI |
获取价格 |
Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC− | |
NTJD4105CT1G | ONSEMI |
获取价格 |
Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC− | |
NTJD4105CT2 | ONSEMI |
获取价格 |
Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC− | |
NTJD4105CT2G | ONSEMI |
获取价格 |
Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC− | |
NTJD4105CT4 | ONSEMI |
获取价格 |
Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC− |