Datasheet > JAN2N6300

JAN2N6300

更新时间： 2024-11-03 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管局域网
页数	文件大小	规格书
15页	84K
描述
TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 8A I(C) \| TO-66

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JAN2N6300 数据手册

INCH POUND

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 15 September 1997

MIL-PRF-19500/539B

15 June 1997

SUPERSEDING

MIL-S-19500/539A

20 October 1993

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER

TYPES 2N6300, 2N6301 JANTX AND JANTXV

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, Darlington, silicon, power transistors. Two levels of

product assurance are provided for each device type as specified in MIL-PRF-19500. For JAN quality assurance level (see 6.3).

1.2 Physical dimensions. See figure 1.

1.3 Maximum ratings.

P_T1/

T_C= 100°C

V_CBO

V_CEO

V_EBO

I_C

I_B

T_OPand T_STG

T_C= 0°C

V dc

A dc

mA dc

120

°C

2N6300

2N6301

-55 TO +200

1/ Derate linearly at 0.428 W/°C above T_C> 0°C.

1.4 Primary electrical characteristics.

h_FE21/

V_CE= 3 V dc

I_C= 4 A dc

h_FE31/

V_CE= 3 V dc

I_C= 8 A dc

h_fe

C_obo

Pulse response

t_ont_off

V_CE= 3 V dc

I_C= 3 A dc

f = 1 MHz

100 kHz ≤ f ≤ 1 MHz/

V_CB= 10 V dc

I_E= 0

µs

2.0

µs

Min

750

100

Max

18000

350

200

8.0

See footnote at end of table.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH

43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or

by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...15

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JAN2N6308	MICROSEMI	获取价格	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal
JAN2N6338	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 25A I(C) \| TO-3
JAN2N6339	MICROSEMI	获取价格	Power Bipolar Transistor, 25A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
JAN2N6340	MICROSEMI	获取价格	Power Bipolar Transistor, 25A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
JAN2N6341	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 25A I(C) \| TO-3
JAN2N6350	MICROSEMI	获取价格	NPN DARLINGTON POWER SILICON TRANSISTOR
JAN2N6351	MICROSEMI	获取价格	NPN DARLINGTON POWER SILICON TRANSISTOR
JAN2N6352	MICROSEMI	获取价格	NPN DARLINGTON POWER SILICON TRANSISTOR