是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-204AA |
包装说明: | METAL CAN-2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.77 |
最大集电极电流 (IC): | 25 A | 集电极-发射极最大电压: | 140 V |
最小直流电流增益 (hFE): | 30 | JEDEC-95代码: | TO-3 |
JESD-30 代码: | O-MBFM-P2 | JESD-609代码: | e0 |
端子数量: | 2 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 参考标准: | MIL |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N6341 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 25A I(C) | TO-3 | |
JAN2N6350 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JAN2N6351 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JAN2N6352 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JAN2N6353 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JAN2N6378 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
JAN2N6379 | ETC |
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TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50A I(C) | TO-3 | |
JAN2N6383 | MICROSEMI |
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Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
JAN2N6384 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
JAN2N6385 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 |