Datasheet > JAN2N6379

JAN2N6379

更新时间： 2024-11-03 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关局域网
页数	文件大小	规格书
16页	94K
描述
TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 50A I(C) \| TO-3

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JAN2N6379 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 25 October 1999

INCH-POUND

MIL-PRF-19500/515C

25 July 1999

SUPERSEDING

MIL-S-19500/515B

15 March 1993

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER

TYPE 2N6378, 2N6379 JAN, JANTX, JANTXV, JANC AND JANHC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP silicon, power transistors. Three levels of product

assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each

unencapsulated device type.

1.2 Physical dimensions. See figure 1 (TO-3); figure 2 (JANC and JANHC).

1.3 Maximum ratings.

Types

CBO

CEO

EBO

and T

STG

= +25°C 1/

= +100°C 1/

V dc

A dc

°C

2N6378

2N6379

250

143

120

140

100

120

-65 to +200

1/ Between T = +25°C and T = +200°C, linear derating factor (average) = 1.43 W/°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...16

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