Datasheet > JAN2N6678T1

JAN2N6678T1

更新时间： 2024-11-27 14:51:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
31页	468K
描述
Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

JAN2N6678T1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.06
Is Samacsys：	N	最大集电极电流 (IC)：	15 A
配置：	Single	最小直流电流增益 (hFE)：	8
最高工作温度：	200 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	175 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

JAN2N6678T1 数据手册

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 10 May 2011.

INCH-POUND

MIL-PRF-19500/538F

10 February 2011

SUPERSEDING

MIL-PRF-19500/538E

25 April 2009

PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,

TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, AND 2N6693,

JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA,

JANKCA, JANKCAM, JANKCAD, JANKCAP, JANKCAL, JANKCAR, JANKCAF, JANKCAG, AND JANKCAH

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Four levels

of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to

eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators “M”, “D”, “P“,

“L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements.

1.2 Physical dimensions. See figure 1 (TO-3) - 2N6676, 2N6678; figure 2 (TO-61) - 2N6691, 2N6693, figure 3

(TO-254AA) - 2N6676T1, 2N6678T1, figure 4 (TO-257AA) - 2N6676T3, 2N6678T3, and figure 5 (JANHC and

JANKC).

1.3 Maximum ratings.

R_θJC

(2)

Types

P_T

V_CBOand

V_CEX

V_CEO

T_Jand T_STG

T_A= +25°C

T_C= +25°C (1)

175

(3) 125

175

V dc

450

650

450

650

450

650

V dc

300

400

300

400

300

400

°C/W

1.0

1.3

1.0

°C

2N6676, 2N6676T1

2N6678, 2N6678T1

2N6676T3

2N6678T3

2N6691

-65 to +200

2N6693

175

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since

contact information can change, you may want to verify the currency of this address information using the

ASSIST Online database at https://assist.daps.dla.mil .

AMSC N/A

FSC 5961

12 3 4 5 6 7...31

中文翻译

下载PDF

与JAN2N6678T1相关器件

型号	品牌	获取价格	描述	数据表
JAN2N6689	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 15A I(C) \| TO-210AC
JAN2N6690	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 15A I(C) \| TO-210AC
JAN2N6691	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JAN2N6693	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JAN2N6756	NJSEMI	获取价格	HEXFET TRANSISTORS
JAN2N6758	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-3
JAN2N6760	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 5.5A I(D) \| TO-3
JAN2N6762	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 4.5A I(D) \| TO-3
JAN2N6764	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
JAN2N6766	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543

与JAN2N6678T1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

JAN2N6678T1

JAN2N6678T1 技术参数

JAN2N6678T1 数据手册

与JAN2N6678T1相关器件

与JAN2N6678T1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JAN2N6678T1

JAN2N6678T1 技术参数

JAN2N6678T1 数据手册

与JAN2N6678T1相关器件

与JAN2N6678T1相关文章

您还可以找

您在本页遇到什么问题？