Datasheet > JAN2N6790

JAN2N6790

更新时间： 2024-09-30 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管脉冲
页数	文件大小	规格书
26页	181K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 3.5A I(D) \| TO-39

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JAN2N6790 数据手册

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 08 March 1998.

INCH POUND

MIL-PRF-19500/555G

08 December 1997

SUPERSEDING

MIL-S-19500/555F

31 March 1995

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON

TYPES 2N6788, 2N6788U, 2N6790, 2N6790U, 2N6792, 2N6792U, 2N6794 AND 2N6794U

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power

transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figures 1 (TO-205AF), 3 (LCC), and figures 4, 5, 6, and 7 for JANHC and JANKC (die) dimensions.

1.3 Unless otherwise specified, maximum ratings at T = +25 C.

Type

and T V

and R

= +25 C

STG

+25 C

+100 C

100k ft.

altitude

V dc

A dc

A (pk)

C/W

2N6788

2N6790

2N6792

2N6794

0.8

100

200

400

500

100

200

400

500

6.0

3.5

2.0

1.5

3.5

2.25

1.25

1.0

6.0

3.5

2.0

1.5

6.25

-55

+150

300

1/ Derate linearly 0.16 W/ C for T > +25 C.

T_{J( max )}T_C

P_T

R_θJX

T_{J( max )}T_C

x ( at

T_{J( max )}

I_D

(

R_θJX)

R_DS(on)

3/ I

= 4I ; I as calculated in footnote 2/.

D1 D1

4/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving

this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East

Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC/NA

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...26

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与JAN2N6790相关器件

型号	品牌	获取价格	描述	数据表
JAN2N6790U	MICROSEMI	获取价格	Power Field-Effect Transistor, 2.8A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Me
JAN2N6792	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 2A I(D) \| TO-39
JAN2N6794	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 1.5A I(D) \| TO-39
JAN2N6796	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
JAN2N6796E3	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
JAN2N6798	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
JAN2N6798E3	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
JAN2N6800	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
JAN2N6800E3	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
JAN2N6802	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557

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