是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.18 |
其他特性: | HIGH RELIABILITY | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 5.5 A | 最大漏极电流 (ID): | 5.5 A |
最大漏源导通电阻: | 0.42 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 25 W |
认证状态: | Qualified | 参考标准: | MIL-19500 |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N6798 | INFINEON |
功能相似 |
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6798 with Hermetic Packagi | |
IRFF230 | INFINEON |
功能相似 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Me |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N6798E3 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JAN2N6800 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JAN2N6800E3 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JAN2N6802 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JAN2N6802E3 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JAN2N6804 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 11A I(D) | TO-204AA | |
JAN2N6806 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6.5A I(D) | TO-204AA | |
JAN2N682E3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, SCR | |
JAN2N6849U | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, | |
JAN2N686 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 250V V(DRM), 250V V(RRM), 1 Element, TO-208AA, TO-48, TO-208 |