Datasheet > 2N6798

2N6798

更新时间： 2023-12-06 20:12:18

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	1201K
描述
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6798 with Hermetic Packaging

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2N6798 数据手册

PD-90431E

IRFF230

JANTX2N6798

JANTXV2N6798

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTORS

200V, N-CHANNEL

REF: MIL-PRF-19500/557

THRU-HOLE TO-205AF (TO-39)

Product Summary

Part Number

BVDSS

RDS(on)

I_D

IRFF230

200V

5.5A

0.40

TO-39

Description

Features

The HEXFET^®technology is the key to International

Rectifier’s HiRel advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on state

resistance combined with high trans conductance.

 Repetitive Avalanche Ratings

 Dynamic dv/dt Rating

 Hermetically Sealed

 Simple Drive Requirements

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching and temperature stability of the

electrical parameters.

They are well suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifiers

and high energy pulse circuits.

Absolute Maximum Ratings

Symbol

Value

Parameter

Units

I_D1@ V_GS= 10V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 10V, T_C= 100°C Continuous Drain Current

5.5

3.5

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

0.20

± 20

207.5

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

I_AR

E_AR

Avalanche Current 

5.5

2.5

4.5

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

dv/dt

T_J

Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

0.98 (Typical)

For Footnotes, refer to the page 2.

2018-11-20

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7

中文翻译

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2N6798 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N6798	INFINEON	完全替代	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=5.5A)
JANTX2N6798	INFINEON	完全替代	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=5.5A)
2N6798	MICROSEMI	功能相似	N-CHANNEL MOSFET

与2N6798相关器件

型号	品牌	获取价格	描述	数据表
2N6798_10	MICROSEMI	获取价格	N-CHANNEL MOSFET
2N6798E	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6798EA	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6798EB	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6798EBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6798EC	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6798ED	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6798EPBF	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6798SCC5205/019	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6798TX	RENESAS	获取价格	5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

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