Datasheet > JAN2N6693

JAN2N6693

更新时间： 2024-11-03 22:51:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	64K
描述
NPN POWER SILICON TRANSISTOR

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中文翻译

获取价格

数据手册
替代型号

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JAN2N6693 数据手册

TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 538

Devices

Qualified Level

JAN

2N6676

2N6678

2N6691

2N6693

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

2N6676 2N6678 Unit

2N6691 2N6693

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

300

450

400

650

Vdc

Adc

V_CEO

V_CBO

V_CEX

V_EBO

I_B

8.0

5.0

2N6676, 2N6678

TO-3 (TO-204AA)*

Collector Current

I_C

2N6676 2N6691

2N6678 2N6693

6.0⁽²⁾

175

3.0⁽³⁾

175

Total Power Dissipation

@ T_A= 25⁰C

P_T

@ T_C= 25⁰C⁽¹⁾

Operating & Storage Junction Temperature Range

-65 to +200

⁰C

T_op;

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

⁰C/W

Thermal Resistance, Junction-to-Case

1.0

qJC

2N6691, 2N6693

TO-61*

1) Derate linearly 1.0 W/⁰C for T_C> 25⁰C

2) Derate linearly 34.2 mW/⁰C for T_A> 25⁰C

3) Derate linearly 17.1 mW/⁰C for T_A> 25⁰C

* See Appendix A for Package

Outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 200 mAdc

Symbol

Min.

Max.

Unit

Vdc

300

400

2N6676, 2N6691

2N6678, 2N6693

V_(BR)

CEO

Collector-Emitter Cutoff Current

V_CE= 450 Vdc, V_BE= 1.5 Vdc

V_CE= 650 Vdc, V_BE= 1.5 Vdc

0.1

mAdc

2N6676, 2N6691

2N6678, 2N6693

I_CEX

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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JAN2N6693 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N6693	MICROSEMI	完全替代	NPN POWER SILICON TRANSISTOR
JANTX2N6693	MICROSEMI	完全替代	NPN POWER SILICON TRANSISTOR
2N6693	MICROSEMI	功能相似	NPN POWER SILICON TRANSISTOR

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JAN2N6762	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 4.5A I(D) \| TO-3
JAN2N6764	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
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JAN2N6766T1	MICROSEMI	获取价格	Power Field-Effect Transistor, 30A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
JAN2N6768	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 14A I(D) \| TO-3
JAN2N6768T1	MICROSEMI	获取价格	Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
JAN2N6770	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543