5秒后页面跳转
JANTX2N6693 PDF预览

JANTX2N6693

更新时间: 2024-11-03 22:57:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 64K
描述
NPN POWER SILICON TRANSISTOR

JANTX2N6693 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-63
包装说明:POST/STUD MOUNT, O-MUPM-X3针数:3
Reach Compliance Code:compliantHTS代码:8541.29.00.95
风险等级:5.25外壳连接:COLLECTOR
最大集电极电流 (IC):15 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):8
JEDEC-95代码:TO-61JESD-30 代码:O-MUPM-X3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):175 W
认证状态:Qualified参考标准:MIL
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):15 MHzBase Number Matches:1

JANTX2N6693 数据手册

 浏览型号JANTX2N6693的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 538  
Devices  
Qualified Level  
JAN  
2N6676  
2N6678  
2N6691  
2N6693  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Symbol  
2N6676 2N6678 Unit  
2N6691 2N6693  
Collector-Emitter Voltage  
Collector-Base Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
300  
450  
450  
400  
650  
650  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VCEX  
VEBO  
IB  
8.0  
5.0  
15  
2N6676, 2N6678  
TO-3 (TO-204AA)*  
Collector Current  
IC  
2N6676 2N6691  
2N6678 2N6693  
6.0(2)  
175  
3.0(3)  
175  
W
W
Total Power Dissipation  
@ TA = 250C  
PT  
@ TC = 250C(1)  
Operating & Storage Junction Temperature Range  
-65 to +200  
0C  
Top;  
T
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
1.0  
R
qJC  
2N6691, 2N6693  
TO-61*  
1) Derate linearly 1.0 W/0C for TC > 250C  
2) Derate linearly 34.2 mW/0C for TA > 250C  
3) Derate linearly 17.1 mW/0C for TA > 250C  
* See Appendix A for Package  
Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 200 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
300  
400  
2N6676, 2N6691  
2N6678, 2N6693  
V(BR)  
CEO  
Collector-Emitter Cutoff Current  
VCE = 450 Vdc, VBE = 1.5 Vdc  
VCE = 650 Vdc, VBE = 1.5 Vdc  
0.1  
0.1  
mAdc  
2N6676, 2N6691  
2N6678, 2N6693  
ICEX  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

JANTX2N6693 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N6693 MICROSEMI

完全替代

NPN POWER SILICON TRANSISTOR
JAN2N6693 MICROSEMI

完全替代

NPN POWER SILICON TRANSISTOR
2N6693 MICROSEMI

功能相似

NPN POWER SILICON TRANSISTOR

与JANTX2N6693相关器件

型号 品牌 获取价格 描述 数据表
JANTX2N6756 INFINEON

获取价格

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14A)
JANTX2N6756 NJSEMI

获取价格

HEXFET TRANSISTORS
JANTX2N6758 INFINEON

获取价格

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9A)
JANTX2N6760 INFINEON

获取价格

POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.00ohm, Id=5.5A)
JANTX2N6762 INFINEON

获取价格

POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=4.5A)
JANTX2N6764 INFINEON

获取价格

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.055ohm, Id=38A)
JANTX2N6764 MICROSEMI

获取价格

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
JANTX2N6766 MICROSEMI

获取价格

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
JANTX2N6766 INFINEON

获取价格

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.085ohm, Id=30A)
JANTX2N6766T1 MICROSEMI

获取价格

Power Field-Effect Transistor, 30A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Me