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JAN2N6762

更新时间： 2024-11-28 23:59:59
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22页 134K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-3

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JAN2N6762 数据手册

 浏览型号JAN2N6762的Datasheet PDF文件第2页浏览型号JAN2N6762的Datasheet PDF文件第3页浏览型号JAN2N6762的Datasheet PDF文件第4页浏览型号JAN2N6762的Datasheet PDF文件第5页浏览型号JAN2N6762的Datasheet PDF文件第6页浏览型号JAN2N6762的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this  
revision shall be completed by 20 August 1998  
INCH-POUND  
MIL-PRF-19500/542F  
20 April 1998  
SUPERSEDING  
MIL-S-19500/542E  
17 August 1994  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL,  
SILICON TYPES 2N6756, 2N6758, 2N6760, 2N6762,  
JAN, JANTX, JANTXV, JANS, JANHC, and JANKC  
This specification is approved for use by all Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors.  
Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of  
product assurance are provided for each unencapsulated device type.  
1.2 Physical dimensions. See figure 1 (TO-204AA; formerly TO-3), and figures 2, 3, for JANHC and JANKC die dimensions. See 6.5  
for unencapsulated device types.  
1.3 Maximum ratings. Unless otherwise specified, T = +25 C.  
A
P 1/  
T
P
T
V
DS  
V
DG  
V
GS  
I
D1  
2/  
I
D2  
2/  
Type  
T
= +25 C  
W
T
= +25 C  
(free air)  
W
T
= +25 C  
A dc  
T
C
= +100 C  
A dc  
C
C
C
V dc  
V dc  
V dc  
2N6756  
2N6758  
2N6760  
2N6762  
75  
75  
75  
75  
4
4
4
4
100  
200  
400  
500  
100  
200  
400  
500  
20  
20  
20  
20  
14.0  
9.0  
5.5  
4.5  
9.0  
6.0  
3.5  
3.0  
I
S
I
T and T  
V
Max r  
(
DS on)  
1/  
R
JC  
DM  
J
STG  
ISO  
Type  
V
GS  
= 10 V dc, I = I  
D D2  
70,000 feet  
altitude  
max  
3/  
T = 25 C  
J
T = 150 C  
J
A dc  
A (pk)  
C
ohms  
ohms  
C/W  
2N6756  
2N6758  
2N6760  
2N6762  
14.0  
9.0  
5.5  
4.5  
56  
36  
22  
18  
-55 to +150  
-55 to +150  
-55 to +150  
-55 to +150  
0.18  
0.4  
1.0  
1.5  
0.36  
0.84  
2.5  
1.67  
1.67  
1.67  
1.67  
400  
500  
3.75  
TJ max − TC  
1/ Derate linearly 0.6 W/ C for T > +25 C.  
C
P =  
T
RΘ  
JC  
max  
TJ  
T
C
−
2/  
max  
at TJ  
R
x RDS  
(
)
Θ
(
)
on  
JC  
3/ I  
= 4 I ; ID1 as calculated in note 2.  
D1  
DM  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document  
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH  
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or  
by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...22

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JAN2N6766 MICROSEMI

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 		N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
JAN2N6766T1 MICROSEMI

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 		Power Field-Effect Transistor, 30A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
JAN2N6768 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 14A I(D) | TO-3
JAN2N6768T1 MICROSEMI

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 		Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
JAN2N6770 MICROSEMI

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 		N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
JAN2N6770T1 MICROSEMI

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 		Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
JAN2N6782 MICROSEMI

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 		This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up t
JAN2N6782U MICROSEMI

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 		Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Me
JAN2N6784 ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2.25A I(D) | TO-39

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