型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N6788U | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Me | |
JAN2N6790 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.5A I(D) | TO-39 | |
JAN2N6790U | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 2.8A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Me | |
JAN2N6792 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-39 | |
JAN2N6794 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 1.5A I(D) | TO-39 | |
JAN2N6796 | MICROSEMI |
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N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JAN2N6796E3 | MICROSEMI |
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N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JAN2N6798 | MICROSEMI |
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N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JAN2N6798E3 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JAN2N6800 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 |