Datasheet > JAN2N6649

JAN2N6649

更新时间： 2024-11-26 23:59:59

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页数	文件大小	规格书
17页	77K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 60V V(BR)CEO \| 10A I(C) \| TO-3

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JAN2N6649 数据手册

The documentation process conversion measures

necessary to comply with this revision shall be

completed by 10 December 1999

INCH-POUND

MIL-PRF-19500/527B

10 September 1999

SUPERSEDING

MIL-S-19500/527A

1 July 1993

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER

TYPES 2N6648, 2N6649 and 2N6650 JAN, JANTX AND JANTXV

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP silicon, darlington power transistor. Three levels of

product assurance are provided as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO - 3).

1.3 Maximum ratings.

CBO

CEO

EBO

T and T

STG

qJC

= +25°C

V dc

A dc

°C

°C/W

2N6648

2N6649

2N6650

5.0

-40

-60

-80

-40

-60

-80

-5.0

-0.25

-10

-65 to +175

1.76

1/ Derate linearly 33.3 mW/°C above T > +25°C.

2/ Derate linearly 567 mW/°C above T > +25°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this

document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street,

Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end

of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...17

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与JAN2N6649相关器件

型号	品牌	获取价格	描述	数据表
JAN2N665	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 5A I(C) \| TO-3
JAN2N6650	MICROSEMI	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
JAN2N6660	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 2A I(D) \| TO-39
JAN2N6660B	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
JAN2N6660B	TEMIC	获取价格	Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
JAN2N6661	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 90V V(BR)DSS \| 2A I(D) \| TO-39
JAN2N6661B	TEMIC	获取价格	Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Meta
JAN2N6674	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 15A I(C) \| TO-204AA
JAN2N6675	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 15A I(C) \| TO-204AA
JAN2N6676	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR