Datasheet > JAN2N6660

JAN2N6660

更新时间： 2024-11-26 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
17页	78K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 2A I(D) \| TO-39

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JAN2N6660 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 30 October 1999

INCH-POUND

MIL-PRF-19500/547B

30 July 1999

SUPERSEDING

MIL-S-19500/547A

20 January 1988

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

SILICON TYPES 2N6660 AND 2N6661

JAN, JANTX, JANTXV AND JANS

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level,

high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated

device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO-205AD).

1.3 Maximum ratings. Unless otherwise specified, T = +25°C.

Type

DGR

T and

= +25°C

T = +100°C

STG

V dc

A dc

A(pk)

°C

-65 to +150

2N6660

2N6661

6.25

725

0.99

0.86

0.62

0.54

-0.99

-0.86

± 20

1/ Derate linearly 0.05 W/°C for T > +25°C

P(rated)

2/ Derate above T = +25 °C according to the formula

I_D

where P(rated) = 150 - (T -25) (0.05) watts;

K = max r

at T =+150°C.

DS(on)

3/ R

£ 1 M ohm.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...17

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