生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.74 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 5 A | 配置: | DARLINGTON WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 2000 | JEDEC-95代码: | TO-66 |
JESD-30 代码: | O-MBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 认证状态: | Qualified |
参考标准: | MIL-19500/472B | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANTXV2N6353 | MICROSEMI |
类似代替 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JANTX2N6353 | MICROSEMI |
类似代替 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
2N6353 | MICROSEMI |
类似代替 |
NPN DARLINGTON POWER SILICON TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N6378 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
JAN2N6379 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50A I(C) | TO-3 | |
JAN2N6383 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
JAN2N6384 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
JAN2N6385 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
JAN2N6437 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
JAN2N6438 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 120V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
JAN2N650A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 | |
JAN2N651A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 | |
JAN2N652A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 |