是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | TO-66 | 包装说明: | FLANGE MOUNT, O-MBFM-P3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 80 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 2000 | JESD-30 代码: | O-MBFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 25 W | 认证状态: | Not Qualified |
参考标准: | MIL | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 50 MHz |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANTXV2N6352 | MICROSEMI |
完全替代 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JANTX2N6352 | MICROSEMI |
完全替代 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
2N6352 | MICROSEMI |
完全替代 |
NPN DARLINGTON POWER SILICON TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N6353 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JAN2N6378 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
JAN2N6379 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50A I(C) | TO-3 | |
JAN2N6383 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
JAN2N6384 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
JAN2N6385 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
JAN2N6437 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
JAN2N6438 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 120V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
JAN2N650A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 | |
JAN2N651A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 |