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JAN2N6341

更新时间: 2024-02-12 08:26:44
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
17页 85K
描述
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 25A I(C) | TO-3

JAN2N6341 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code:unknown风险等级:5.77
其他特性:HIGH RELIABILITY外壳连接:COLLECTOR
最大集电极电流 (IC):25 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-3JESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
参考标准:MIL-19500表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JAN2N6341 数据手册

 浏览型号JAN2N6341的Datasheet PDF文件第2页浏览型号JAN2N6341的Datasheet PDF文件第3页浏览型号JAN2N6341的Datasheet PDF文件第4页浏览型号JAN2N6341的Datasheet PDF文件第5页浏览型号JAN2N6341的Datasheet PDF文件第6页浏览型号JAN2N6341的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 25 October 1999.  
INCH-POUND  
MIL-PRF-19500/509C  
25 July 1999  
SUPERSEDING  
MIL-S-19500/509B  
25 June 1993  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER  
TYPES 2N6338 AND 2N6341  
JAN, JANTX, JANTXV AND JANS  
This specification is approved for use by all Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN, silicon power transistors. Four levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See Figure 1, (similar to TO – 204AA formally TO - 3).  
1.3 Maximum ratings.  
Types  
P
T
1/ 2/  
P
T
V
CBO  
V
CEO  
V
EBO  
I
C
I
B
T
and T  
OP  
STG  
T
= +25°C  
T
= +100°C  
C
A
W
W
V dc  
V dc  
V dc  
A dc  
A dc  
°C  
2N6338  
2N6341  
200  
200  
112  
112  
120  
180  
100  
150  
6.0  
6.0  
25  
25  
10  
10  
-65 to +200  
-65 to +200  
1/ Between T = +25°C and T = +200°C, linear derating factor (average) = 1.14 W/°C.  
C
C
2/ Maintain voltage and current according to the safe operating area shown in figure 4.  
1.4 Primary electrical characteristics at T = 25°C.  
A
Limit  
h
FE1  
1/  
V
V
C
(
BE(SAT)  
CE SAT)  
obo  
1 MHz £ f £ 1 MHz  
= 10 V dc  
I
= 25 A dc  
I
= 10 A dc  
I
= 10 A dc  
= 1.0 V dc  
I
= 25 A dc  
I = 2.5 A dc  
B
I
= 10 A dc  
= 1.0 A dc  
C
C
C
C
C
V
CB  
V
CE  
= 2.0 V dc  
V
CE  
= 2.0 V dc  
I
B
I
B
I
E
= 0  
V dc  
V dc  
V dc  
pF  
Min  
Max  
12  
---  
30  
120  
---  
1.8  
---  
1.8  
---  
1.0  
---  
450  
1/ Pulsed, (see 4.5.1).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document  
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH  
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this  
document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

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