生命周期: | Active | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code: | unknown | 风险等级: | 5.77 |
其他特性: | HIGH RELIABILITY | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 25 A | 集电极-发射极最大电压: | 150 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 12 |
JEDEC-95代码: | TO-3 | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 200 °C | 最低工作温度: | -65 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
参考标准: | MIL-19500 | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N6350 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JAN2N6351 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JAN2N6352 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JAN2N6353 | MICROSEMI |
获取价格 |
NPN DARLINGTON POWER SILICON TRANSISTOR | |
JAN2N6378 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, | |
JAN2N6379 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50A I(C) | TO-3 | |
JAN2N6383 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
JAN2N6384 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
JAN2N6385 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 | |
JAN2N6437 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, |