Datasheet > JAN2N6299

JAN2N6299

更新时间： 2024-02-21 11:53:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管局域网
页数	文件大小	规格书
2页	59K
描述
PNP DARLINGTON POWER SILICON TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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JAN2N6299 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.77
Base Number Matches：	1

JAN2N6299 数据手册

TECHNICAL DATA

PNP DARLINGTON POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 540

Devices

Qualified Level

JAN

2N6298

2N6299

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol 2N6298 2N6299 Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

Vdc

V_CEO

V_CBO

V_EBO

I_B

Vdc

5.0

120

8.0

Vdc

mAdc

Adc

Collector Current

I_C

Total Power Dissipation @ T_C= 0⁰C ⁽¹⁾

⁰C

P_T

T_C= 100⁰C

Operating & Storage Junction Temperature Range

-65 to +175

T_OP_,T_STG

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

⁰C/W

TO-66* (TO-213AA)

Thermal Resistance, Junction-to-Case

1) Derate linearly 0.428 W/⁰C above T_C> 0⁰C

2.33

qJC

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 100 mAdc

Symbol

Min.

Max.

Unit

Vdc

2N6298

2N6299

V_(BR)

CEO

Collector-Emitter Cutoff Current

V_CE= 30 Vdc

V_CE= 40 Vdc

0.5

mAdc

2N6298

2N6299

I_CEO

Collector-Emitter Cutoff Current

V_CE= 60 Vdc, V_BE= 1.5 Vdc

V_CE= 80 Vdc, V_BE= 1.5 Vdc

Emitter-Base Cutoff Current

V_EB= 5.0 Vdc

0.5

mAdc

2N6298

2N6299

I_CEX

2.0

I_EBO

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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中文翻译

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与JAN2N6299相关器件

型号	品牌	获取价格	描述	数据表
JAN2N6300	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 8A I(C) \| TO-66
JAN2N6301	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 8A I(C) \| TO-66
JAN2N6306	MICROSEMI	获取价格	Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal
JAN2N6308	MICROSEMI	获取价格	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal
JAN2N6338	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 25A I(C) \| TO-3
JAN2N6339	MICROSEMI	获取价格	Power Bipolar Transistor, 25A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
JAN2N6340	MICROSEMI	获取价格	Power Bipolar Transistor, 25A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
JAN2N6341	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 25A I(C) \| TO-3
JAN2N6350	MICROSEMI	获取价格	NPN DARLINGTON POWER SILICON TRANSISTOR
JAN2N6351	MICROSEMI	获取价格	NPN DARLINGTON POWER SILICON TRANSISTOR