Datasheet > JAN2N6283

JAN2N6283

更新时间： 2024-11-26 22:51:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管开关局域网
页数	文件大小	规格书
2页	58K
描述
NPN DARLINGTON POWER SILICON TRANSISTOR

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中文翻译

获取价格

数据手册
替代型号

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JAN2N6283 数据手册

TECHNICAL DATA

NPN DARLINGTON POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 504

Devices

Qualified Level

JAN

2N6283

2N6284

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol 2N6583 2N6284 Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

Collector Current

Total Power Dissipation⁽¹⁾

100

Vdc

Adc

V_CEO

V_CBO

V_EBO

I_B

100

7.0

0.5

I_C

@ T_C= +25⁰C

@ T_C= +100⁰C

175

87.5

⁰C

P_T

Operating & Storage Junction Temperature Range

-65 to +200

T_J_,T

stg

THERMAL CHARACTERISTICS

Characteristics

TO-3*

(TO-204AA)

Symbol

Max.

Unit

⁰C/W

Thermal Resistance, Junction-to-Case

1) Derate linearly @ 1.17 W/⁰C above T_C> +25⁰C

0.857

qJC

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 100 mAdc

Symbol

Min.

Max.

Unit

Vdc

100

2N6283

2N6284

V_(BR)

CEO

Collector-Emitter Cutoff Current

V_CE= 40 Vdc

V_CE= 50 Vdc

1.0

mAdc

2N6283

2N6284

I_CEO

Collector-Emitter Cutoff Current

V_CE= 80 Vdc, V_BE= 1.5 Vdc

V_CE= 100 Vdc, V_BE= 1.5 Vdc

Emitter-Base Cutoff Current

V_EB= 7.0 Vdc

5.0

mAdc

2N6283

2N6284

I_CEX

2.5

I_EBO

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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中文翻译

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JAN2N6283 替代型号

型号	品牌	替代类型	描述	数据表
JANTX2N6284	MICROSEMI	类似代替	NPN DARLINGTON POWER SILICON TRANSISTOR
JANTX2N6277	MICROSEMI	类似代替	PNP POWER SILICON TRANSISTOR
2N5665	MICROSEMI	类似代替	NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455

与JAN2N6283相关器件

型号	品牌	获取价格	描述	数据表
JAN2N6284	MICROSEMI	获取价格	NPN DARLINGTON POWER SILICON TRANSISTOR
JAN2N6286	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 20A I(C) \| TO-3
JAN2N6287	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 20A I(C) \| TO-3
JAN2N6298	MICROSEMI	获取价格	PNP DARLINGTON POWER SILICON TRANSISTOR
JAN2N6299	MICROSEMI	获取价格	PNP DARLINGTON POWER SILICON TRANSISTOR
JAN2N6300	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 8A I(C) \| TO-66
JAN2N6301	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 8A I(C) \| TO-66
JAN2N6306	MICROSEMI	获取价格	Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal
JAN2N6308	MICROSEMI	获取价格	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal
JAN2N6338	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 25A I(C) \| TO-3