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JAN2N6286

更新时间： 2024-11-26 23:59:59
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描述
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 20A I(C) | TO-3

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JAN2N6286 数据手册

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The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 4 November 1999  
INCH-POUND  
MIL-PRF-19500/505B  
4 August 1999  
SUPERSEDING  
MIL-S-19500/505A(USAF)  
6 October 1993  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER  
TYPE 2N6286, 2N6287 JAN, JANTX, AND JANTXV  
This specification is approved for use by the Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for PNP, Darlington, power transistors. Three levels of product  
assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1 (similar to T0-3).  
1.3 Maximum ratings.  
P
T
1/  
Type  
V
CBO  
V
CEO  
V
EBO  
I
C
I
B
T
and T  
STG  
op  
T
= +25°C  
T
= +100°C  
C
C
W
175  
175  
W
87.5  
87.5  
V dc  
-80  
-100  
V dc  
-80  
-100  
V dc  
-7  
-7  
A dc  
-20  
-20  
A dc  
-0.5  
-0.5  
°C  
2N6286  
2N6287  
-65 to +175  
-65 to +175  
1/ Derate linearly at 1.17 W/°C above T > +25°C.  
C
1.4 Primary electrical characteristics.  
h
1/  
h
1/  
V
V
V
FE2  
FE3  
CE(sat)1  
CE(sat)2  
BE(sat)  
I = -20 A dc  
C
Switching  
V
= -3 V dc  
V
= -3 V dc  
I
= -20 A dc  
I
= -10 A dc  
CE  
CE  
C
C
t
t
off  
on  
I
C
= -10 A dc  
I
C
= -20 A dc  
300  
I
= -200 mA dc  
I
= -40 mA dc  
I = -200 mA dc  
B
B
B
V dc  
-3.0  
V dc  
-2.0  
V dc  
-4.0  
ms  
ms  
Min  
1,250  
Max  
18,000  
2
10  
C
h
fe  
½h ½  
fe  
obo  
R
qJC  
V
CB  
= -10 V dc  
V
= -3 V dc  
V = -3 V dc  
CE  
I = -10 A dc  
C
CE  
I = -10 A dc  
C
I
E
= 0  
f = 1 MHz  
f = 1 MHz  
100 kHz £ f £ 1 MHz  
pF  
°C/W  
Min  
700  
8
Max  
400  
80  
0.857  
1/ Pulsed (see 4.5.1).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document  
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH  
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this  
document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...14

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与JAN2N6286相关器件

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JAN2N6287 ETC

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 		TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 20A I(C) | TO-3
JAN2N6298 MICROSEMI

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 		PNP DARLINGTON POWER SILICON TRANSISTOR
JAN2N6299 MICROSEMI

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 		PNP DARLINGTON POWER SILICON TRANSISTOR
JAN2N6300 ETC

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 		TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 8A I(C) | TO-66
JAN2N6301 ETC

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 		TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 8A I(C) | TO-66
JAN2N6306 MICROSEMI

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 		Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal
JAN2N6308 MICROSEMI

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 		Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal
JAN2N6338 ETC

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 		TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | TO-3
JAN2N6339 MICROSEMI

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 		Power Bipolar Transistor, 25A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
JAN2N6340 MICROSEMI

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 		Power Bipolar Transistor, 25A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL

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