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JANTX2N6284 PDF预览

JANTX2N6284

更新时间: 2024-11-03 22:57:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
2页 58K
描述
NPN DARLINGTON POWER SILICON TRANSISTOR

JANTX2N6284 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-3
包装说明:TO-3, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:1.45
外壳连接:COLLECTOR最大集电极电流 (IC):20 A
集电极-发射极最大电压:100 V配置:DARLINGTON
最小直流电流增益 (hFE):500JEDEC-95代码:TO-204AA
JESD-30 代码:O-MBFM-P2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Qualified参考标准:MIL-19500/504C
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

JANTX2N6284 数据手册

 浏览型号JANTX2N6284的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN DARLINGTON POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 504  
Devices  
Qualified Level  
JAN  
2N6283  
2N6284  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Symbol 2N6583 2N6284 Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
Collector Current  
Total Power Dissipation(1)  
80  
100  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VEBO  
IB  
80  
100  
7.0  
0.5  
20  
IC  
@ TC = +250C  
@ TC = +1000C  
175  
87.5  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
TO-3*  
(TO-204AA)  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
1) Derate linearly @ 1.17 W/0C above TC > +250C  
0.857  
R
qJC  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
80  
100  
2N6283  
2N6284  
V(BR)  
CEO  
Collector-Emitter Cutoff Current  
VCE = 40 Vdc  
VCE = 50 Vdc  
1.0  
1.0  
mAdc  
2N6283  
2N6284  
ICEO  
Collector-Emitter Cutoff Current  
VCE = 80 Vdc, VBE = 1.5 Vdc  
VCE = 100 Vdc, VBE = 1.5 Vdc  
Emitter-Base Cutoff Current  
VEB = 7.0 Vdc  
5.0  
5.0  
mAdc  
mAdc  
2N6283  
2N6284  
ICEX  
2.5  
IEBO  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

JANTX2N6284 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N6284 MICROSEMI

完全替代

NPN DARLINGTON POWER SILICON TRANSISTOR
JAN2N6284 MICROSEMI

完全替代

NPN DARLINGTON POWER SILICON TRANSISTOR
2N6283 MICROSEMI

完全替代

NPN DARLINGTON POWER SILICON TRANSISTOR

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