Datasheet > JANTX2N6350

JANTX2N6350

更新时间： 2024-11-03 22:57:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	58K
描述
NPN DARLINGTON POWER SILICON TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

JANTX2N6350 数据手册

TECHNICAL DATA

NPN DARLINGTON POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 472

Devices

Qualified Level

JAN

2N6350

2N6351

2N6352

2N6353

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

2N6350 2N6351

2N6352 2N6353

Symbol

Units

Collector-Emitter Voltage

Collector-Base Voltage

150

Vdc

V_CER

V_CBO

150

6.0

0.5

5.0

10⁽¹⁾

Vdc

Adc

Emitter-Base Voltage

Base Current

V_EBO

I_B

Collector Current

I_C

2N6350, 2N6351

TO-33*

2N6350 2N6352

2N6351 2N6353

Total Power Dissipation @ T_A= 25⁰C

@ T_C= 100⁰C

Operating & Storage Junction Temperature Range

1.0⁽²⁾

5.0⁽³⁾

2.0⁽⁴⁾

25⁽⁵⁾

⁰C

P_T

-65 to +200

T_J_,T

stg

THERMAL CHARACTERISTICS

Characteristics

2N6350 2N6352

2N6351 2N6353

Symbol

Unit

Thermal Resistance, Junction-to-Case

4.0

⁰C/W

qJC

1) Applies for t_p£ 10 ms, Duty cycle £ 50%

2N6352, 2N6353

TO-24* (TO-213AA)

2) Derate linearly @ 5.72 mW/⁰C above T_A> 25⁰C

3) Derate linearly @ 50 mW/⁰C above T_C> 100⁰C

4) Derate linearly @ 11.4 mW/⁰C above T_A> 25⁰C

5) Derate linearly @ 250 mW/⁰C above T_C> 100⁰C

*See Appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

150

Vdc

I_C= 25 mAdc, R_B1E= 2.2 kW, R_B2E= 100 W

2N6350, 2N6352

2N6351, 2N6353

V_(BR)

CER

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

Page 1 of 2

中文翻译

下载PDF

JANTX2N6350 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N6350	MICROSEMI	完全替代	NPN DARLINGTON POWER SILICON TRANSISTOR
JAN2N6350	MICROSEMI	完全替代	NPN DARLINGTON POWER SILICON TRANSISTOR

与JANTX2N6350相关器件

型号	品牌	获取价格	描述	数据表
JANTX2N6351	MICROSEMI	获取价格	NPN DARLINGTON POWER SILICON TRANSISTOR
JANTX2N6352	MICROSEMI	获取价格	NPN DARLINGTON POWER SILICON TRANSISTOR
JANTX2N6353	MICROSEMI	获取价格	NPN DARLINGTON POWER SILICON TRANSISTOR
JANTX2N6378	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 50A I(C) \| TO-3
JANTX2N6379	MICROSEMI	获取价格	Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
JANTX2N6383	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 40V V(BR)CEO \| 10A I(C) \| TO-3
JANTX2N6384	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 10A I(C) \| TO-3
JANTX2N6385	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 10A I(C) \| TO-3
JANTX2N6437	MICROSEMI	获取价格	暂无描述
JANTX2N6546	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR