Datasheet > JANTX2N6661

JANTX2N6661

更新时间： 2024-11-04 19:44:03

品牌	Logo	应用领域
威世 - VISHAY		开关晶体管
页数	文件大小	规格书
6页	125K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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技术参数
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JANTX2N6661 技术参数

是否无铅：	含铅	生命周期：	Transferred
零件包装代码：	BCY	包装说明：	,
针数：	2	Reach Compliance Code：	unknown
风险等级：	5.61	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	2 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	6.25 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

JANTX2N6661 数据手册

2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV

www.vishay.com

Vishay Siliconix

N-Channel 90 V (D-S) MOSFET

FEATURES

• Military Qualified

PRODUCT SUMMARY

V_DS(V)

• Low On-Resistence: 3.6 

• Low Threshold: 1.6 V

• Low Input Capacitance: 35 pF

R_DS(on)() at V_GS= 10 V

Configuration

Single

• Fast Switching Speed: 6 ns

• Low Input and Output Leakage

TO-205AD

(TO-39)

BENEFITS

• Guaranteed Reliability

• Low Offset Voltage

• Low-Voltage Operation

• Easily Driven Without Buffer

• High-Speed Circuits

• Low Error Voltage

APPLICATIONS

• Hi-Rel Systems

• Direct Logic-Level Interface: TTL/CMOS

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

Top View

• Battery Operated Systems

• Solid-State Relays

ORDERING INFORMATION

DESCRIPTION/DSCC

PART NUMBER

VISHAY ORDERING

PART NUMBER

PART

PACKAGE

Commercial

2N6661

Commercial, Lead (Pb)-free

2N6661-E3

www.vishay.com/doc?67884

See -2 Flow Document

2N6661-2

JANTX2N6661 (std Au leads)

JANTX2N6661 (with solder)

JANTX2N6661P (with PIND)

JANTXV2N6661 (std Au leads)

JANTXV2N6661P (with PIND)

2N6661JTX02

2N6661JTXL02

2N6661JTXP02

2N6661JTXV02

2N6661JTVP02

TO-205AD

(TO-39)

2N6661JANTX

2N6661JANTXV

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

0.86

0.54

Continuous Drain Current (T_J= 150 °C)

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

P_D

T_C= 25 °C

T_A= 25 °C

6.25

Maximum Power Dissipation

0.725

170

Thermal Resistance, Junction-to-Ambient^b

Thermal Resistance, Junction-to-Case

R_thJA

R_thJC

°C/W

°C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

Notes

a. Pulse width limited by maximum junction temperature.

b. Not required by military spec.

S11-1542-Rev. D, 01-Aug-11

Document Number: 70225

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与JANTX2N6661相关器件

型号	品牌	获取价格	描述	数据表
JANTX2N6661-2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Meta
JANTX2N6661B	TEMIC	获取价格	Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Meta
JANTX2N6661P	VISHAY	获取价格	TRANSISTOR 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD, TO-39 TOLL LID, 3
JANTX2N6674	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 15A I(C) \| TO-204AA
JANTX2N6675	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 15A I(C) \| TO-204AA
JANTX2N6676	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JANTX2N6676T1	MICROSEMI	获取价格	Transistor
JANTX2N6678	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JANTX2N6678T1	MICROSEMI	获取价格	Transistor
JANTX2N6689	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 15A I(C) \| TO-210AC

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