JANTX2N6782PBF

更新时间： 2024-02-09 16:27:22

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Provisional Data Sheet No. PD-9.423B

JANTX2N6782

JANTXV2N6782

[REF:MIL-PRF-19500/556]

HEXFET^®POWER MOSFET

[GENERIC:IRFF110]

N-CHANNEL

100 Volt, 0.60Ω HEXFET

Product Summary

Part Number

JANTX2N6782

JANTXV2N6782

BVDSS

RDS(on)

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry achieves very low on-

state resistance combined with high transconductance.

100V

0.60Ω

3.5A

HEXFET transistors also feature all of the well-es-

tablish advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, and high energy pulse circuits, and virtu-

ally any application where high reliability is required.

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter

JANTX2N6782, JANTXV2N6782 Units

@ V

= 10V, T = 25°C Continuous Drain Current

3.5

@ V

= 10V, T = 100°C Continuous Drain Current

2.25

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ➂

Operating Junction

@ T = 25°C

W/K ➄

0.12

dv/dt

±20

5.5

V/ns

-55 to 150

Storage Temperature Range

Lead Temperature

STG

(0.063 in. (1.6mm) from

300

^oC

case for 10.5 seconds)

0.98 (typical)

Weight

To Order

12 3 4 5 6

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JANTX2N6786	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A)
JANTX2N6786	MICROSEMI	获取价格	Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Me
JANTX2N6786U	INFINEON	获取价格	HEXFET TRANSISTOR
JANTX2N6786U	MICROSEMI	获取价格	暂无描述
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JANTX2N6788E3	MICROSEMI	获取价格	Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal