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JANTX2N6788U PDF预览

JANTX2N6788U

更新时间: 2024-11-03 22:57:27
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英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 230K
描述
HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

JANTX2N6788U 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, TO-39, LCC-18Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.16
Is Samacsys:N其他特性:AVALANCHE ENERGY RATED
雪崩能效等级(Eas):0.242 mJ外壳连接:SOURCE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):6 A最大漏极电流 (ID):4.5 A
最大漏源导通电阻:0.35 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CQCC-N18JESD-609代码:e0
元件数量:1端子数量:18
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):20 W
最大脉冲漏极电流 (IDM):18 A认证状态:Qualified
参考标准:MIL-19500/555子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANTX2N6788U 数据手册

 浏览型号JANTX2N6788U的Datasheet PDF文件第2页浏览型号JANTX2N6788U的Datasheet PDF文件第3页浏览型号JANTX2N6788U的Datasheet PDF文件第4页浏览型号JANTX2N6788U的Datasheet PDF文件第5页浏览型号JANTX2N6788U的Datasheet PDF文件第6页浏览型号JANTX2N6788U的Datasheet PDF文件第7页 
PD - 93983  
REPETITIVEAVALANCHEANDdv/dtRATED  
HEXFET TRANSISTORS  
IRFE120  
JANTX2N6788U  
[REF:MIL-PRF-19500/555]  
100V, N-CHANNEL  
SURFACE MOUNT (LCC-18)  
Product Summary  
Part Number  
BVDSS  
RDS(on)  
ID  
IRFE120  
100V  
0.30Ω  
4.5A  
LCC-18  
The leadless chip carrier (LCC) package represents the  
logical next step in the continual evolution of surface  
mount technology. Desinged to be a close replacement  
for the TO-39 package, the LCC will give designers the  
extra flexibility they need to increase circuit board den-  
sity. International Rectifier has engineered the LCC pack-  
age to meet the specific needs of the power market by  
increasing the size of the bottom source pad, thereby  
enhancing the thermal and electrical performance. The  
lid of the package is grounded to the source to reduce  
RF interference.  
Features:  
!
!
!
!
!
!
!
!
Surface Mount  
Small Footprint  
Alternative to TO-39 Package  
Hermetically Sealed  
Dynamic dv/dt Rating  
Avalanche Energy Rating  
Simple Drive Requirements  
Light Weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
4.5  
3.0  
18  
14  
0.11  
±20  
76  
-
D
D
GS  
GS  
C
A
= 10V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
W
W/°C  
V
mJ  
A
mJ  
V/ns  
D
C
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
GS  
E
AS  
I
E
AR  
-
AR  
dv/dt  
5.5  
-55 to 150  
T
J
T
Storage Temperature Range  
oC  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5 S)  
0.42(typical)  
For footnotes refer to the last page  
www.irf.com  
1
1/16/01  

JANTX2N6788U 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N6788U INFINEON

完全替代

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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