型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N6788 | INFINEON |
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POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A) | |
JANTX2N6788E3 | MICROSEMI |
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Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal | |
JANTX2N6788U | INFINEON |
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HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
JANTX2N6790 | INFINEON |
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POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.80ohm, Id=3.5A) | |
JANTX2N6790U | ETC |
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200V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package | |
JANTX2N6792 | INFINEON |
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POWER MOSFET N-CHANNEL(BVss=400V, Rds(on)=1.8ohm, Id=2.0A) | |
JANTX2N6792 | RENESAS |
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2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | |
JANTX2N6792U | ETC |
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400V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package | |
JANTX2N6794 | INFINEON |
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POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=3.0ohm, Id=1.5A) | |
JANTX2N6794U | INFINEON |
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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |