是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.16 |
Is Samacsys: | N | 外壳连接: | SOURCE |
配置: | Single | 最小漏源击穿电压: | 400 V |
最大漏极电流 (Abs) (ID): | 1.25 A | 最大漏极电流 (ID): | 1.25 A |
最大漏源导通电阻: | 3.6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CQCC-N18 | JESD-609代码: | e0 |
端子数量: | 18 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 15 W | 认证状态: | Qualified |
参考标准: | MILITARY STANDARD (USA) | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | NO LEAD | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N6788 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A) | |
JANTX2N6788E3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal | |
JANTX2N6788U | INFINEON |
获取价格 |
HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
JANTX2N6790 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.80ohm, Id=3.5A) | |
JANTX2N6790U | ETC |
获取价格 |
200V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package | |
JANTX2N6792 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVss=400V, Rds(on)=1.8ohm, Id=2.0A) | |
JANTX2N6792 | RENESAS |
获取价格 |
2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | |
JANTX2N6792U | ETC |
获取价格 |
400V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package | |
JANTX2N6794 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=3.0ohm, Id=1.5A) | |
JANTX2N6794U | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |