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JANTX2N6786U PDF预览

JANTX2N6786U

更新时间: 2024-11-03 21:55:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关
页数 文件大小 规格书
7页 139K
描述
HEXFET TRANSISTOR

JANTX2N6786U 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.16
Is Samacsys:N外壳连接:SOURCE
配置:Single最小漏源击穿电压:400 V
最大漏极电流 (Abs) (ID):1.25 A最大漏极电流 (ID):1.25 A
最大漏源导通电阻:3.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CQCC-N18JESD-609代码:e0
端子数量:18工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):15 W认证状态:Qualified
参考标准:MILITARY STANDARD (USA)子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANTX2N6786U 数据手册

 浏览型号JANTX2N6786U的Datasheet PDF文件第2页浏览型号JANTX2N6786U的Datasheet PDF文件第3页浏览型号JANTX2N6786U的Datasheet PDF文件第4页浏览型号JANTX2N6786U的Datasheet PDF文件第5页浏览型号JANTX2N6786U的Datasheet PDF文件第6页浏览型号JANTX2N6786U的Datasheet PDF文件第7页 
PD - 91782  
IRFE310  
JANTX2N6786U  
JANTXV2N6786U  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
[REF:MIL-PRF-19500/556]  
N-CHANNEL  
400Volt, 3.6, HEXFET  
Product Summary  
The leadless chip carrier (LCC) package represents  
the logical next step in the continual evolution of  
surface mount technology. The LCC provides  
designers the extra flexibility they need to increase  
circuit board density. International Rectifier has  
engineered the LCC package to meet the specific  
needs of the power market by increasing the size of  
thebottomsourcepad,therebyenhancingthethermal  
and electrical performance. The lid of the package  
is grounded to the source to reduce RF interference.  
Part Number  
BVDSS  
RDS(on)  
ID  
IRFE310  
400V  
3.6Ω  
1.25A  
Features:  
n
n
n
n
n
n
Hermetically Sealed  
Simple Drive Requirements  
Ease of Paralleling  
Small footprint  
Surface Mount  
Lightweight  
HEXFET transistors also feature all of the well-es-  
tablished advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling  
and electrical parameter temperature stability.They  
are well-suited for applications such as switching  
power supplies, motor controls, inverters, choppers,  
audio amplifiers and high-energy pulse circuits,  
and virtually any application where high reliability  
is required.  
Absolute Maximum Ratings  
Parameter  
IRFE310, JANTX-, JANTXV-, 2N6786U Units  
I
@ V  
= 10V, T = 25°C Continuous Drain Current  
1.25  
D
GS  
C
A
I
D
@ V  
= 10V, T = 100°C Continuous Drain Current  
0.80  
5.5  
GS  
C
I
Pulsed Drain Current   
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
15  
W
W/°C  
V
D
C
0.12  
±20  
V
GS  
E
Single Pulse Avalanche Energy ‚  
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
34  
mJ  
AS  
dv/dt  
2.8  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
300 ( for 5 seconds)  
0.42 (typical)  
Surface Temperature  
Weight  
www.irf.com  
1
10/9/98  

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