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JANTX2N6806 PDF预览

JANTX2N6806

更新时间: 2024-11-03 22:57:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 211K
描述
POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)

JANTX2N6806 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:TO-3, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.2
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):66 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):6.5 A最大漏极电流 (ID):6.5 A
最大漏源导通电阻:0.92 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):75 W
最大脉冲漏极电流 (IDM):28 A认证状态:Qualified
参考标准:MIL-19500/562子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

JANTX2N6806 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.548B  
JANTX2N6806  
JANTXV2N6806  
[REF:MIL-PRF-19500/562]  
HEXFET® POWER MOSFET  
[GENERIC:IRF9230]  
P-CHANNEL  
-200 Volt, 0.80HEXFET  
Product Summary  
Part Number  
JANTX2N6806  
JANTXV2N6806  
BVDSS  
RDS(on)  
ID  
HEXFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transis-  
tors. The efficient geometry achieves very low on-  
state resistance combined with high transconductance.  
-200V  
0.80Ω  
-6.5A  
HEXFET transistors also feature all of the well-es-  
tablish advantages of MOSFETs, such as voltage  
control, very fast switching, ease of paralleling and  
electrical parameter temperature stability. They are  
well-suited for applications such as switching power  
supplies, motor controls, inverters, choppers, audio  
amplifiers, and high energy pulse circuits, and virtu-  
ally any application where high reliability is required.  
Features:  
Avalanche Energy Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Absolute Maximum Ratings  
Parameter  
JANTX2N6806, JANTXV2N6806 Units  
I
@ V  
= -10V, T = 25°C Continuous Drain Current  
-6.5  
D
GS  
C
A
I
@ V  
= -10V, T = 100°C Continuous Drain Current  
-4.0  
-28  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
75  
W
W/K ➄  
V
D
C
0.60  
±20  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
GS  
E
66  
mJ  
AS  
AR  
I
-6.5  
A
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
7.5  
mJ  
AR  
dv/dt  
-5.0  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
Lead Temperature  
STG  
(0.063 in. (1.6mm) from  
300  
case for 10.5 seconds)  
11.5 (typical)  
Weight  
To Order  
 
 

JANTX2N6806 替代型号

型号 品牌 替代类型 描述 数据表
IRF9240E INFINEON

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