生命周期: | Active | 零件包装代码: | LCC |
包装说明: | CHIP CARRIER, R-CQCC-N15 | 针数: | 18 |
Reach Compliance Code: | unknown | 风险等级: | 5.2 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 0.185 mJ |
外壳连接: | SOURCE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (ID): | 1.8 A |
最大漏源导通电阻: | 2.07 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CQCC-N15 | 元件数量: | 1 |
端子数量: | 15 | 工作模式: | ENHANCEMENT MODE |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 7.2 A | 认证状态: | Qualified |
参考标准: | MIL-19500/555 | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N6792U | ETC |
获取价格 |
400V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package | |
JANTX2N6794 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=3.0ohm, Id=1.5A) | |
JANTX2N6794U | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS | |
JANTX2N6796 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JANTX2N6796 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=8.0A) | |
JANTX2N6796E3 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JANTX2N6796U | INFINEON |
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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
JANTX2N6798 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=5.5A) | |
JANTX2N6798 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JANTX2N6798E3 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 |