Datasheet > JANTX2N6798

JANTX2N6798

更新时间： 2024-11-03 22:57:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关
页数	文件大小	规格书
6页	203K
描述
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=5.5A)

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JANTX2N6798 数据手册

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Provisional Data Sheet No. PD-9.431B

JANTX2N6798

JANTXV2N6798

[REF:MIL-PRF-19500/557]

HEXFET^®POWER MOSFET

[GENERIC:IRFF230]

N-CHANNEL

200 Volt, 0.40Ω HEXFET

Product Summary

Part Number

JANTX2N6798

JANTXV2N6798

BVDSS

RDS(on)

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry achieves very low on-

state resistance combined with high transconductance.

5.5A

200V

0.40Ω

HEXFET transistors also feature all of the well-es-

tablish advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, and high energy pulse circuits, and virtu-

ally any application where high reliability is required.

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter

JANTX2N6798, JANTXV2N6798 Units

@ V

= 10V, T = 25°C Continuous Drain Current

5.5

@ V

= 10V, T = 100°C Continuous Drain Current

3.5

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ➂

Operating Junction

@ T = 25°C

W/K ➄

0.20

±20

dv/dt

4.5

V/ns

-55 to 150

Storage Temperature Range

Lead Temperature

STG

^oC

(0.063 in. (1.6mm) from

300

case for 10.5 seconds)

0.98 (typical)

Weight

To Order

12 3 4 5 6

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JANTX2N6798 替代型号

型号	品牌	替代类型	描述	数据表
2N6798	INFINEON	完全替代	200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6798 with Hermetic Packagi

与JANTX2N6798相关器件

型号	品牌	获取价格	描述	数据表
JANTX2N6798E3	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
JANTX2N6798U	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
JANTX2N6800	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.0ohm, Id=3.0A)
JANTX2N6800	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
JANTX2N6800E3	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
JANTX2N6800U	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED
JANTX2N6802	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=2.5A)
JANTX2N6802	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
JANTX2N6802E3	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
JANTX2N6802U	INFINEON	获取价格	HEXFET TRANSISTOR