是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | CYLINDRICAL, O-MBCY-W3 | Reach Compliance Code: | compliant |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.13 |
其他特性: | HIGH RELIABILITY | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 3.5 A | 最大漏极电流 (ID): | 2.5 A |
最大漏源导通电阻: | 1.6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 25 W | 最大脉冲漏极电流 (IDM): | 11 A |
认证状态: | Qualified | 参考标准: | MIL-19500 |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N6802E3 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JANTX2N6802U | INFINEON |
获取价格 |
HEXFET TRANSISTOR | |
JANTX2N6804 | INFINEON |
获取价格 |
TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A) | |
JANTX2N6806 | INFINEON |
获取价格 |
POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) | |
JANTX2N682 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, SCR | |
JANTX2N683 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 100V V(DRM), 100V V(RRM), 1 Element, TO-208AA, TO-48, TO-208 | |
JANTX2N6845 | INFINEON |
获取价格 |
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A) | |
JANTX2N6845U | INFINEON |
获取价格 |
-100V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANTX2N6845U with Hermeti | |
JANTX2N6847 | INFINEON |
获取价格 |
POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=1.5ohm, Id=-2.5A) | |
JANTX2N6847U | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |